There are two transitions during the switching period: the turn-on of the low-side switch, and the turn on of the high–side switch. The low-side turn-on switch is critical because the transition is almost lossless, or a “free ride.” After the high-side switch turns off, the inductor current drives the switch-node voltage losslessly to ground. The best time to turn on the low-side switch is at the end of transition.
It is not critical if the body diode conducts a short time before the low side turns on, as it does not lead to reverse recovery loss. Any excess carriers in the junction dissipate before the next switching transition.
However, there is excess conduction loss, if the current remains in the body diode for too long. Timing the high-side FET turn-on is the most important transition. An early turn-on results in shoot-through losses due to cross-conduction with the low-side FET. A late turn-on leads to additional conduction loss and injects excess carriers in the low-side FET body diode, which must be recovered. In either case, efficiency degrades.
To characterize efficiency as a function of timing between drive signals, I constructed power supplies with adjustable delays on the driver signals. I then evaluated efficiency versus delay times. Figures 1A, 1B, and 1C show the results.
Figure 1A shows when the high-side FET is turned on before the low-side FET is fully off. An extended Miller region is apparent in the low-side gate drive where the low-side and high-side FETs are both on simultaneously, causing shoot-through current in the power stage. When the low-side FET finally turns off, there is additional voltage overshoot on the switch node.
Figure 1A: Advanced high-side timing creates shoot-through.
In Figure 1B , the