New Products
0.37-mm ultra-flat package Schottky rectifiers handle currents up to 1.5-A
February 03, 2012 | Paul Buckley | 222904060
NXP Semiconductors is claiming a major new benchmark in miniaturization with the launch of the company’s next-generation family of low VF Schottky rectifiers targeting the mobile device market. With a typical thickness of just 0.37 mm and an outline of 1.6 x 0.8 mm, the new DFN1608D-2 (SOD1608) plastic package claims to be the smallest on the market that is capable of carrying a current of up to 1.5 A.
The DFN1608D-2 has been released with a portfolio of six Schottky Barrier rectifiers: three 20 V types optimized for low forward voltage and three 40 V types optimized for low reverse current. Average forward current ranges between 0.5 and 1.5 A.
In addition to offering space-saving options, NXP’s new Schottky rectifiers also deliver industry-leading power performance due to a huge heatsink at the package bottom. The low forward voltage of these Schottky diodes reduces power consumption and thereby enables longer battery life in mobile devices. Typical applications include battery charging, display backlighting, switched-mode power supply (SMPS) and DC to DC conversion for small portable equipment. With the 1.5 A types, these can be extended to larger devices such as tablet PCs.
The rectifiers in DFN1608D-2 are also attractive to manufacturers because of the package’s side pads, which are tin-plated to protect against oxidation and allow side solderability. Unlike other leadless solutions where the soldered contacts remain hidden under the package, the side pads help avoid package tilting on the PCB, making it even flatter and maximizing stack density. The ability to solder the package at the side also enables easy visual inspection of the contact. By eliminating the need to inspect the solder contacts with expensive and complex x-ray equipment, the DFN1608D-2 makes the manufacturing process more cost-effective.
Availability
The PMEG2005EPK (20 V, 0.5 A) PMEG2010EPK (20 V, 1 A) are in mass production.
Design-in samples available, with mass production starting in March 2012 include the following:
PMEG2015EPK, 20 V, 1.5 A
PMEG4005EPK, 40 V, 0.5 A
PMEG4010EPK, 40 V, 1 A
PMEG4015EPK, 40 V, 1.5 A
More information about the PMEG2005EPK at
www.nxp.com/documents/data_sheet/PMEG2005EPK.pdf
More information about the PMEG2010EPK at
www.nxp.com/documents/data_sheet/PMEG2010EPK.pdf
In addition to offering space-saving options, NXP’s new Schottky rectifiers also deliver industry-leading power performance due to a huge heatsink at the package bottom. The low forward voltage of these Schottky diodes reduces power consumption and thereby enables longer battery life in mobile devices. Typical applications include battery charging, display backlighting, switched-mode power supply (SMPS) and DC to DC conversion for small portable equipment. With the 1.5 A types, these can be extended to larger devices such as tablet PCs.
The rectifiers in DFN1608D-2 are also attractive to manufacturers because of the package’s side pads, which are tin-plated to protect against oxidation and allow side solderability. Unlike other leadless solutions where the soldered contacts remain hidden under the package, the side pads help avoid package tilting on the PCB, making it even flatter and maximizing stack density. The ability to solder the package at the side also enables easy visual inspection of the contact. By eliminating the need to inspect the solder contacts with expensive and complex x-ray equipment, the DFN1608D-2 makes the manufacturing process more cost-effective.
Availability
The PMEG2005EPK (20 V, 0.5 A) PMEG2010EPK (20 V, 1 A) are in mass production.
Design-in samples available, with mass production starting in March 2012 include the following:
PMEG2015EPK, 20 V, 1.5 A
PMEG4005EPK, 40 V, 0.5 A
PMEG4010EPK, 40 V, 1 A
PMEG4015EPK, 40 V, 1.5 A
More information about the PMEG2005EPK at
www.nxp.com/documents/data_sheet/PMEG2005EPK.pdf
More information about the PMEG2010EPK at
www.nxp.com/documents/data_sheet/PMEG2010EPK.pdf
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