The FDMA910PZ and FDME910PZT feature the MicroFET MOSFET package and provide exceptional thermal performance for their physical size (2 x 2 mm and 1.6 x 1.6 mm), making them well suited for switching and linear mode applications. Available with a 20 V rating, the devices offer low on-state resistance. To prevent electrostatic discharge (ESD) failures, the FDMA910PZ and FDME910PZT are equipped with optimized Zener diode protection, which also reduces IGSS leakage maximum rating from 10 µA to 1 µA.

The FDMA910PZ is packaged in a low profile - 0.8 mm maximum in the  MicroFET 2 x 2 mm package with HBM ESD protection level > 2.8 kV typical.

FDME910PZT is packaged in a low profile - 0.55 mm maximum in the MicroFET 1.6 x 1.6 mm thin package with HBM ESD protection level > 2 kV typical.

The FDMA910PZ and FDME910PZT are free from halogenated compounds and antimony oxides and are RoHS-compliant. Both devices provide safe operation at low-voltage and are suitable for use in handsets and portable devices.

Availability and Pricing    

Samples of the FDMA910PZ and FDME910PZT P-Channel PowerTrench MOSFETs are available upon request.  The FDMA910PZ is priced at $0.36 in 1,000 quantity pieces.  The FDME910PZT is priced at $0.33 in 1,000 quantity pieces.

More information about FDMA910PZ and FDME910PZT P-Channel PowerTrench MOSFETs at www.fairchildsemi.com/pf/FD/FDMA910PZ.html

and www.fairchildsemi.com/pf/FD/FDME910PZT.html