The AUIRS2117S and AUIRS2118S high-side drivers feature short turn-on and turn-off propagation time to drive the MOSFET or IGBT at a much higher frequency to shrink system size by enabling the use of smaller filtering components.

The AUIRS2117S features output signals in phasewith the input signal and CMOS Schmitt-triggered inputs with pull-down. The AUIRS2118S features output signals out of phasewith the input signal and CMOS Schmitt-triggered inputs with pull-up. Both devices provide under-voltage lockout and offer a gate drive supply range from 10 V to 20 V.

The new ICs feature proprietary high-voltage integrated circuit (HVIC) and latch immune CMOS technologies to offer ruggedized monolithic construction and benchmark negative voltage spike immunity for reliable operation even under extreme switching conditions and short circuit events. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, operating up to 600 V.

The devices are qualified according to AEC-Q100 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.
        
Availability and Pricing

Pricing for the AUIRS2117S and AUIRS2118S begins at 0.59 US Dollars each in 100,000-unit quantities. Production orders are available immediately. The automotive-qualified device is lead-free and RoHS compliant.

Related link: www.irf.com