April 29, 2013 Advanced Power Electronics Corp. (USA) has signed a UK distribution deal with Neutron Ltd, which covers the UK and Ireland.
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April 23, 2013 Diodes Incorporated has introduced a family of current-limited power switches offering high current handling in an ultra-small (2 mm x 2 mm) package.

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April 11, 2013 Toshiba Electronics Europe (TEE) has announced that Toshiba Corporation has started volume production of silicon carbide (SiC) power devices, in anticipation of growing demand for industrial and automotive applications.
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February 11, 2013 Organic light emitting diodes (OLEDs) and organic solar cells can now be developed at Fraunhofer Institute for Applied Polymer Research IAP in Potsdam-Golm in a near-industrial scale.
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January 24, 2013 Diodes Incorporated is expanding the company’s standard logic product line, with more package options added to its four families of high-speed and advanced high-speed CMOS parts. Read more

January 10, 2013 Vishay Intertechnology has introduced 19 new automotive-grade FRED Pt and HEXFRED Hyperfast and Ultrafast rectifiers and soft recovery diodes in DPAK, TO-220, D2PAK, TO-262, TO-247, and modified TO-247 packages. Read more

December 20, 2012 Diodes Incorporated has introduced a pair of ultra low dropout (LDO) linear regulators, capable of delivering a continuous 3.0 A output for a dropout voltage of 0.23 mV. Read more

November 27, 2012 Diodes Incorporated has released four omnipolar Hall effect switches offering sensitivities to closely match the magnetic field strengths used in proximity and position detection duties in a variety of different product designs. Read more

November 13, 2012 Cree, Inc. is claiming to have made the first commercially available all-SiC Cree power module.  The new high frequency module, rated at 100 A current handling and 1200 V blocking, allows higher efficiency, compact and lighter weight systems.

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September 28, 2012 Diodes Incorporated has entered into an agreement to acquire Power Analog Microelectronics, Inc. (PAM), which is a provider of advanced analog and high-voltage power ICs.  The acquisition is expected to close in the fourth quarter of 2012.

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September 26, 2012 Infineon has expanded the company's SiC (Silicon Carbide) portfolio with the introduction of the 650 V thinQ! SiC Schottky Barrier Diodes Generation 5. Read more

September 12, 2012 Diodes Incorporated has introduced a 60 V linear LED driver which delivers a constant current of up to 150 mA and provides designers of low-current illumination and signage applications with a simplified circuit solution for accurately controlling 1/2 W LEDs. Read more

September 6, 2012 Toshiba Electronics Europe (TEE) has expanded its line-up of small-signal, medium-power Schottky barrier diodes (SBDs) and MOSFETs that are especially suitable for wireless power transfer applications.
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August 13, 2012 The RBxx8 series of ultra-low reverse current Schottky barrier diodes from Rohm Semiconductor are capable of operating at high temperatures for use in automotive and power supply devices. Read more

August 10, 2012 ROHM Semiconductor has developed the RBxx8 series of ultra-low IR Schottky barrier diodes capable of operating at high temperatures, enabling support for automotive and power supply devices.
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July 30, 2012 Taiwan Semiconductor is extending the company's series of High Voltage Schottky Barrier Rectifiers with two new parts (20 A & 30 A) with 200 V reverse voltage, using Schottky Barrier Technology with a platinum barrier metal. Read more

July 11, 2012 Diodes Incorporated has introduced the AL5801 linear LED driver which only needs two additional components to enable designers to simplify automotive interior, signage and general lighting control circuits. Read more

July 5, 2012

ROHM has developed second-generation SiC (Silicon Carbide) Schottky barrier diodes ideal for power supply circuits in PV (photovoltaic) power conditioners, industrial equipment, servers, air conditioners, and more.

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July 3, 2012 Diodes Incorporated has introduced an overvoltage clamp for the protection of power management ICs (PMIC) in portable applications. 
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July 2, 2012 Diodes Incorporated has introduced a family of low power LNB (low noise block) power management and control ICs for use in set-top boxes, TVs with built-in satellite tuners and PC satellite tuner cards. Read more

June 15, 2012 Linear Technology has introduced a 0 V to 18 V dual ideal diode controller that replaces two high power Schottky diodes, enabling low loss ORing of multiple power sources with minimal disturbance to supply voltages. Read more

June 1, 2012 Linear Technology Corporation has introduced a high voltage ideal diode controller that offers a simple low loss replacement to Schottky diodes, along with key features targeted for automotive, avionics as well as solar applications. Read more

May 7, 2012 Skyworks has introduced a high power shunt PIN diode for transmit and receive switching applications. The SMP1304-085LF is a discrete solution in a very low thermal resistance package that combines very low insertion loss, good isolation, excellent power handling (40-W C/W), and low distortion. Read more

April 19, 2012 Diodes Incorporated has launched a line of high-efficiency N- and P-channel MOSFETs in low-profile DFN2020-6 packages. Read more

April 18, 2012 Skyworks has introduced three surface mount limiter diodes for receiver protection applications. The surface mountable, low capacitance silicon PIN limiter diodes are designed as shunt connected PIN diodes for high power limiter functions ranging from 10 MHz to over 6 GHz. Read more

April 5, 2012 Anritsu Company has announced that its VectorStar Broadband ME7838A vector network analyzer (VNA) system was used by Modelithics to validate the performance of its novel non-linear diode models for W-Band single anode and W-Band ZBD flip chip schottky diodes from Virginia Diodes Incorported (VDI). Read more

March 21, 2012 Toshiba Electronics Europe (TEE) has introduced a new series of Schottky barrier diodes (SBDs) aimed at high-speed switching applications in the 500 mA to 1000 mA current range. The new devices use a next generation process for improved forward voltage and reverse current performance, which results in lower losses. Read more

March 13, 2012 Diodes Incorporated has unveiled the company's first products to be housed in the ultra-miniature X3-DFN0603-2 package. The company's first 6.0 V Zener and switching diodes to be provided in the 0.6 mm x 0.3 mm x 0.3 mm format take 70% less PCB space than DFN1006-2 packaged alternatives and have an off-board height 40% lower. Read more

February 27, 2012 Enabling flyback power supply designers to replace inefficient Schottky rectifiers with a MOSFET driven as an ideal diode, the ZXGD3105N8 synchronous MOSFET controller from Diodes Incorporated can achieve a standby power consumption for set-top boxes of less than 100mW and full-load efficiencies greater than 87%. Read more

February 2, 2012 Cree, Inc., has introduced a series of packaged diodes that deliver the industry's highest blocking voltage available in SiC Schottky technology. Cree's 1700 V Z-Rec Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra-efficient, smaller and lighter systems—all with improved reliability. These newly released packaged products extend the performance improvements and system cost savings enabled by Z-Rec technology at 1700 V to lower-power applications designed with discrete components. Read more

January 24, 2012 Soitec and Sumitomo Electric Industries have reached a major milestone in their strategic joint development program started in December 2010 by demonstrating four- and six-inch engineered gallium nitride (GaN) substrates and launching pilot production lines to enable wider market adoption. These substrates ─ produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates ─ are well suited for manufacturing advanced high-brightness light-emitting diodes (LEDs) for the lighting market and power-efficient controllers for the electric vehicles and energy markets. Read more

December 23, 2011 Researchers at the University of Illinois have developed a method to chemically etch patterned arrays in gallium arsenide (GaAs) used in solar cells, lasers, light emitting diodes (LEDs), field effect transistors (FETs), capacitors and sensors. Read more

December 15, 2011 Diodes Incorporated has unveiled a 25 V rated synchronous MOSFET controller for notebook and laptop power supply designs of 90 W and above. By enabling the replacement of inefficient Schottky diodes in flyback converters, the ZXGD3104N8 increases power supply efficiency by up to 3.5% through a reduction in rectifier losses of up to 70%. As a result, the device helps power supplies more easily attain the 87% Energy Star V2.0 rating. Read more

December 12, 2011 Diodes Incorporated has introduced the company's first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130 ºC/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280 ºC/W. Read more

December 1, 2011 Diodes Incorporated has introduced the company’s first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, the package supports a power dissipation of up to 1 W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280ºC/W. Read more

November 9, 2011 Helping to increase battery efficiency and reduce board space, the miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET from Diodes Incorporated has been introduced to meet the requirements of designers of space-starved portable products including smartphones and tablet computers. Read more

November 4, 2011 Researchers at the Georgia Institute of Technology have used zinc oxide microwires to significantly improve the efficiency at which gallium nitride light-emitting diodes (LED) convert electricity to ultraviolet light. The devices are believed to be the first LEDs whose performance has been enhanced by the creation of an electrical charge in a piezoelectric material using the piezo-phototronic effect. Read more

October 31, 2011 Fully compliant with the HDMI standard, the AP2331 single channel current-limited load switch from Diodes Incorporated has been optimized for HDMI and monitor port protection duties, 3 V-5 V hot swap interconnects and other applications subject to heavy capacitive loads and the prospect of short-circuit. Read more

October 14, 2011 Diodes Incorporated has released the 12-A-rated SBR12U45LH Super Barrier Rectifier (SBR) which is provided in a ultra-low profile PowerDI-5SP package. The SBR12U45LH SBR addresses key design and manufacturing concerns of solar panel makers producing next generation PV modules. Read more

October 7, 2011 Microsemi Corporation is claiming the industry’s smallest hermetic surface mount package for power transistors and diodes. Microsemi pioneered the development of the new industry-standard U4 package, which has achieved Defense Logistics Agency (DLA) qualification for a range of products. Read more

October 6, 2011 Diodes Incorporated has used FineSim SPICE multi-CPU circuit simulation technology to tape out two highly integrated synchronous switching voltage regulators. The AP6502 and AP6503, 340 kHz switching frequency external compensated synchronous DC/DC buck converters, are designed for use in consumer electronics systems such as digital TVs, LCD monitors and set-top boxes, which require ultra-efficient voltage conversion. Read more

September 30, 2011 Diodes Incorporated has unveiled a buck LED driver which offers switching at a frequency of up to 1 MHz and ensuring closely controlled rise and fall times. The AL8807 reduces EMI issues in the lower cost MR16 LED lamp market. Read more

September 23, 2011 ON Semiconductor has expanded the company's portfolio of Constant Current Regulators (CCR s) to include the NSI50350A. The simple and robust device is designed to provide a thermally efficient and cost-effective alternative to passive/discrete components or driver integrated circuit (IC) solutions for current regulation of Light Emitting Diodes (LEDs). The device is ideal for a variety of 1 W lighting applications including automotive, architectural lighting and signage. Read more

September 22, 2011 Diodes Inc. has expanded the company's range of DiodeStar products with the introduction of two new 600 V DiodeStar rectifiers targeted at Power Factor Correction (PFC) boost diode applications. The DSR6V600P5 and the DSR6U600P5 are housed in Diodes’ proprietary powerDI-5 package, a thermally efficient low-profile small-form-factor package, which enables the design of thinner and cooler products. Read more

September 20, 2011 SemiSouth Laboratories, manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched new 1200V/5A diodes in the true, compact DPAK (TO-252) surface mount packaging which provides the necessary creepage distance and does not require a center pin. Read more

September 8, 2011 Diodes Incorporated has introduced a pair of highly integrated synchronous DC/DC buck converters. The AP6502 and AP6503 are designed for use in consumer electronics systems such as digital TVs, LCD monitors and set-top boxes, which require ultra-efficient voltage conversion.   Read more

September 8, 2011 The all-purpose laser diode drivers iC-NZN and iC-NZP operate laser diodes in both CW and spike-free pulse mode with up to 155 MHz. The devices allow either the optical output power (APC) or laser diode current (ACC) to be controlled. In ACC mode also laser diodes without monitor diodes can be used. Blue laser diodes can also be operated with iC-NZN. Read more

August 31, 2011 Diodes Incorporated has introduced a new device that delivers enhanced robustness and advanced protection for the Universal Serial Bus (USB) interface in a variety of applications, where heavy capacitive loads and short-circuits could occur when connecting devices via the USB port. Read more

August 30, 2011 Diodes Inc. has introduced what the company claims is the industry's smallest fully featured single-chip fan driver with high-output drive capability to provide a cost-effective solution for fan and motor drive applications. Read more

August 9, 2011 ALD NanoSolutions will use a grant from the Defense Advanced Research Projects Agency to develop flexible hybrid inorganic/polymer multilayer gas diffusion barriers using atomic layer deposition (ALD) and molecular layer deposition (MLD). These multilayer barriers will use a roll-to-roll process for the next generation of flexible organic light emitting diodes (FOLEDs) and thin film photovoltaics. Read more

July 29, 2011 Diodes Inc. has introduced a single-channel low-dropout fast-transient linear regulator with fixed output voltage of 5 V and +/-1% accuracy. The new low-dropout regulator integrates the voltage divider to reduce board space and external component count, enabling easier layout and reducing the opportunities for premature board failure. Read more

July 8, 2011 Diodes Incorporated has introduced new fixed and adjustable output linear regulators that feature an ultra-low dropout voltage of 220 mV at 1.5 A. The AP7362 and AP7363 help reduce power consumption and increase regulated voltage output stability. Read more

June 28, 2011 Diodes Incorporated has introduced the company’s AP2401 and AP2411 single-channel power switches designed to help raise USB port protection levels. Read more

June 21, 2011 Diodes Incorporated has introduced a new family of small-signal bipolar transistors that is available in the DFN package, measuring 1 x 0.6 mm, yet delivering the same electrical performance as equivalent devices in much larger packages. The new devices are specifically aimed at load- and signal-switching applications in smart phones and other portable applications that have extreme constraints for designers in terms of PCB area where space is at a premium. Read more

June 16, 2011 The ZXGD3006E6 gate driver from Diodes Incorporated is designed for switching high power IGBTs and helps to increase power conversion efficiency in solar inverter, motor drive and power supply applications. Read more

June 15, 2011 Diodes Incorporated has introduced the first devices in a family of Super Barrier Rectifiers (SBR) designed for automotive applications. With a lower forward voltage drop, improved avalanche rating and higher safe operating area (SOA) than alternative Schottky or ultra-fast diode alternatives, these rugged rectifiers enable automotive designers to increase the reliability of motor control, display panel and LED lighting circuits. Read more

June 15, 2011 For use in low voltage single- and three-phase brushless DC (BLDC) motor control applications, the DMC4040SSD complementary dual MOSFET from Diodes Incorporated features matched N-channel and P-channel Rds(on) performances to ensure DC losses in motor loads are balanced and minimized. Read more

June 9, 2011 Diodes Incorporated has introduced a range of logic devices designed to provide a performance upgrade for legacy 5V TTL systems. Based on an advanced CMOS process offering switching and power efficiency advantages compared with alternative technologies, the 74AHCT1Gxx devices serve as TTL compatible drop-in replacements for existing bipolar or CMOS parts. Read more

May 13, 2011 Diodes Incorporated has released the company’s ZXRE250 and ZXRE252 programmable shunt regulators. The devices feature a low minimum cathode current for regulation of 40 μA, enabling improved efficiency in a range of applications including power supplies for consumer electronics such as computers, set top boxes and LCD TVs. Read more

May 10, 2011 Diodes Incorporated has introduced a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying 0.6 mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and, with a junction to ambient thermal resistance (Rthj-a) of 256 degrees C/W, supports a power dissipation of up to 1.3 W under continuous conditions, double that of comparable alternatives. Read more

April 13, 2011 Diodes Incorporated has released what the company claims is the world's smallest dual output omnipolar Hall effect switch IC, specifically designed for open/close detection in portable, battery-powered products including cell phones and notebook PCs. The dual output AH1891 is optimized for operation over the supply voltage range 1.8 V to 3.3 V and offers a sleep function, assuring an average current consumption of only 7 µA. Read more

April 13, 2011 Advanced Analogic Technologies, Inc., has introduced the AAT2870 lighting management unit (LMU). Highly configurable, the device is capable of driving eight independently programmed LEDs for backlighting and four low-dropout (LDO) regulators for powering camera modules. Read more

March 31, 2011 The AL8806 buck LED driver from Diodes Incorporated is capable of producing a constant current of up to 1.5 A from voltage sources of between 6 V and 30 V. Suiting MR16, 12 V and 24 V LED lamp design, the driver ensures a 5% average LED current accuracy for up to nine high power LEDs over the wide operating voltage range, helping to significantly improve inter-lamp luminance matching. Read more

March 30, 2011 Diodes Incorporated has released a dedicated protection interface designed to protect the latest generation of power management ICs (PMIC) against overvoltages. Comprising an LDO regulator and an n-channel power FET, the AP9050 device controls supply current delivery to the PMIC, switching it on in the presence of a valid wall adapter or USB supply voltage and immediately off in the event of any overvoltage detection. Read more

March 30, 2011 Diodes has introduced the first MOSFETs in a new range of space-saving DFN3020 packaged discrete products. Three dual MOSFET combinations have been released, comprising 20 V and 30 V N-channel and 30 V complementary devices. Read more

March 29, 2011 Diodes Incorporated has introduced a complete family of advanced high speed CMOS logic devices offering power dissipation and switching speed improvements compared with existing high speed CMOS logic alternatives. Operating at 2.0 V to 5.5 V, the 74AHC1Gxx logic family is a drop-in replacement for industry standard logic parts used in broad array of consumer electronic products. Read more

March 16, 2011 Diodes Incorporated is offering a series low power high-side current monitors that provide accurate, high efficiency measurement of load current in motor drive, overload protection and safety applications. Read more

March 9, 2011 Microsemi Corporation has unveiled the company's new solar technology portfolio which include products for renewable energy applications include SmartFusion and IGLOO FPGAs; analog, mixed signal devices such as bypass diodes/switches, MOSFETs, FREDs and IGBTs; DC-DC converters, and pulse width modulation (PWM) modules. Read more

February 18, 2011 Power Integrations has unveiled the company’s Qspeed family of advanced diodes which use a novel silicon-based process to combine a low reverse recovery charge (QRR) with a soft recovery waveform. Read more

January 25, 2011 Market analyst, IMS Research, has released a new report that says the explosive growth projected for power supplies with digital control and management will increase demand for Silicon Carbide (SiC) diodes, Digital Signal Processors (DSPs) and Microprocessors (MPUs). The report concludes that in the long term this trend will be at the expense of PFC controller ICs, and analog controllers and regulators. Read more

January 21, 2011 Diodes Incorporated has released eight single gate logic functions in the miniature 6-pin DFN1010 package. Measuring just 1.0mm by 1.0mm and with a maximum off-board height of 0.4mm, the latest additions to the 74LVC1Gxx logic family provide space-saving opportunities for the smallest handheld devices, including advanced cell phones, satellite navigation systems and tablet computers. Read more

January 18, 2011 Diodes Inc. (Dallas, Texas) has expanded its IntelliFET product family. The new MOSFETs with integrated self-protecting circuitry help designers to significantly improve the reliability of their circuits with little effort. Thus, the new components are ideally suited for applications where inductive loads are switched such as motors and relays, the vendor promises. Read more

January 11, 2011 The 10-Amp gate driver from Diodes Incorporated has been designed to ensure ultra fast switching of power MOSFET and IGBT loads in power supply, solar inverter and motor drive circuits. With its emitter follower configuration delivering propagation delay times of less than 10 ns and rise and fall times of less than 20 ns, the ZXGD3005E6 non inverting gate driver will reduce switching losses, simplify circuit design and improve overall system reliability. Read more

December 20, 2010 Diodes Incorporated is making further additions to its IntelliFET range of self protected MOSFETs. The 60 V, 75 mΩ (typical) rated single N-channel ZXMS6006DG/SG and dual N-channel ZXMS6006DT8 provide thermal shutdown, short circuit, over voltage, over current and input ESD protection facilities enabling circuit designers to dramatically increase circuit reliability. Read more

December 17, 2010 Diodes Incorporated has introduced the APM860x lithium battery charger ICs. Provided in the U-DFN3030 14-pin package, the APM8600 and APM8601 provide a range of safety features designed to protect small form factor portable products during the charging process. Read more

December 15, 2010 Diodes Incorporated has introduced the 150 mA AP7312 and 300 mA AP7332 linear regulators. Characterized by low dropout voltage and low quiescent current, the linear regulators suit low power handheld product design where extending battery life is a key design criteria. Read more

December 14, 2010 Diodes Incorporated has introduced the AL8400 linear LED driver controller. The AL8400 is designed to tightly regulate LED current via an external transistor across wide variations of high brightness LEDs. Suiting a broad range of LED chains in illumination, indication or signage systems, the controller can directly operate from 2.2 V to 18 V and will drive either N-channel MOSFET or NPN Bipolar transistors. Read more

December 13, 2010 Diodes Incorporated has released new versions of the company’s 74LVC1GXX and 74LVCE1GXX CMOS logic families in DFN1410 packages measuring 1.4 mm x 1.0 mm x 0.4 mm high. Read more

December 8, 2010 Diodes Incorporated has released the company’s first device in its PowerDI5060 package, the DMP3010LPS 30 V rated p-channel enhancement mode MOSFET, offering designers of notebooks, netbooks and other consumer electronics improvements in reliability and reductions in pcb space requirements. Read more

December 7, 2010 Diodes Incorporated’s new ultra-low dropout linear voltage regulator offers a quiescent current rating of 70 µA which helps bring energy savings to a range of consumer electronic devices including LCD TVs, STBs and PCs. Read more

October 14, 2010 Diodes Incorporated has expanded its DIOFET product portfolio with the introduction of two dual channel devices. The DMS3017SSD and DMS3019SSD integrate an optimized control MOSFET with a proprietary DIOFET into a single SO8 package to provide a high efficiency solution for point-of-load converters in consumer and industrial applications. Read more

October 6, 2010 Diodes Incorporated has unveiled a multi-topology LED driver designed to increase the performance of high brightness automotive, industrial and commercial lighting systems. Operating in buck, boost and buck-boost modes, the ZXLD1374 LED driver's integrated 60 V power MOSFET switch is capable of producing a maximum LED current of 1.5 A. Read more

September 16, 2010 The SBR1U400P1 super barrier rectifier from Diodes Incorporated has been designed to increase the efficiency of off-line LED drivers by featuring a forward voltage 25% lower than standard p-n diode alternatives. Read more

September 1, 2010 Diodes Incorporated has introduced the first products from its proprietary DIOFET process that monolithically integrates a power MOSFET and anti-parallel Schottky diode into a single die. Used in the low side MOSFET position of synchronous buck point-of-load (PoL) converters, the DMS3014SSS and DMS3015SSS improve the efficiency and lower the operating temperature of fast switching PoL converters in high volume computing, telecom and industrial applications. Read more

August 31, 2010 Light-emitting-diodes (LEDs), once quoted to have 100,000-hour lifetimes, are still working today in some front-panel indicators after 30 years of service. But the advent of high-intensity LEDs for solid-state lighting sacrifices longevity by operating at temperatures too high for lifetimes much longer than a few years. Read more

July 27, 2010 Diodes Incorporated has extended its family of single-gate logic products with the introduction of open drain functions in both standard and enhanced performance versions. Direct replacements for industry standard parts, the devices are suitable for voltage level shifting, active low wired OR, and active high wired AND applications.  Read more

July 15, 2010 A 1.5-A rated buck converter that operates at a fixed switching frequency of 1.4 MHz has been introduced by Diodes Incorporated to enable designers to reduce circuit footprints in a range of products including set top boxes, modems and distributed power systems. Read more

July 13, 2010 Rohm has developed a next-generation SiC (Silicon Carbide) Schottky barrier diodes (SBD), featuring lower loss and higher voltage capability compared to silicon-based SBDs. The SCS110A series claims to provide advantages compared with other SiC SBDs currently on the market regarding forward voltage and operating resistance. Read more

July 8, 2010 Diodes Incorporated has introduced a pair of low dropout linear regulators with industrial temperature rating of -40 to +85 degrees C that suit applications including set-top boxes, routers and LCD monitors. Read more

July 1, 2010 Diodes Incorporated has unveiled a synchronous MOSFET controller for driving a MOSFET in place of a Schottky diode in the secondary side of flyback and resonant converters. Read more

June 29, 2010 Optimized for use in the harshest electrical environments, dual self-protected low side MOSFETs from Diodes Incorporated provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability.  Read more

June 25, 2010 Diodes Incorporated has added eight devices to its single channel power switch product line which is optimized for use in self-powered and bus-powered USB2.0/3.0 applications and other 3-5 V hot swap applications. Read more

June 24, 2010 Diodes Incorporated has extended its MOSFET product line with the introduction of 60 V N-channel devices tailored for use in VoIP communication equipment. Read more

June 24, 2010 NXP Semiconductors is extending its Transient Voltage Suppressor (TVS) diodes portfolio by 35 new products housed in its 2-lead FlatPower package SOD128 (3.8 x 2.5 x 1 mm). Read more

June 21, 2010 Diodes incorporated has introduced bipolar transistor, MOSFET and TVS devices in the ultra small SOT963 package, which achieve the same or better performance of much larger packaged parts. Read more

June 17, 2010 Diodes Incorporated is delivering increased power density and efficiency of power management circuits with the introduction of its 20 V NPN and PNP bipolar transistors packed in a DFN1411-3 surface mount package. Read more

June 7, 2010 Diodes Incorporated has released its first family of single-gate logic products which are built on an advanced 5 V CMOS process and offer performance enhancements over existing alternatives. Read more

May 19, 2010 For a variety of handheld equipment requiring both USB and AC/DC power adapter charging inputs, Diodes Incorporated has introduced a lithium ion/polymer battery charger IC. Read more

May 13, 2010 Diodes Incorporated has introduced a family of six high-side power switches offering complete port protection for a wide range of self-powered and bus-powered USB and other hot swap applications. Read more

May 11, 2010 Diodes Incorporated have introduced new LED drivers designed to provide the simplest possible solution for driving low power high brightness LEDs from a single solar or rechargeable battery cell. Read more

March 30, 2010 Diodes Incorporated has designed its new AP5100 step-down converter to bring space savings and efficiency improvements to set top box, modem and distributed power applications. Read more

March 11, 2010 Diodes Incorporated has released its first transistor products in its miniature PowerDI5 surface mount package. Read more