The FOD3184 consists of an aluminum gallium arsenide (AIGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated into the circuit power stage. The PMOS pull-up transistor has low RDS(ON) for reduced internal power consumption and near rail-to-rail output voltage swing. The device also offers high noise immunity, characterized by a minimum 35 kV/µs common mode rejection (CMR) – ideal for noisy industrial applications.

The device also features a wide VCC operating range (15 V to 30 V), 3 A maximum peak output current and a guaranteed operating temperature range of -40 to +100 degrees C. The FOD3184 also features an under-voltage lockout protection (UVLO) with hysteresis, optimized for driving IGBTs.

The FOD3184 is packaged in an 8-pin dual in-line housing and offers >8.0 mm creepage and clearance distances – a critical end-application requirement for safety agencies. Additionally, the packaging is compatible with 260 degrees C reflow processes for lead-free solder compliance. The 1,414 V working voltage rating (VIORM) allows the device to drive 1,200 V loads with reliable long term insulation performance.

Availability and Pricing

Samples of the FOD3184 are available now and are priced at $1.51 each, 1k pieces

More information about the FOD3184 MOSFET/IGBT gate driver optocoupler at
www.fairchildsemi.com/ds/FO/FOD3184.pdf


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