High radiant intensity infrared emitter offers optical power to 55-mW with 10-ns switching times
The surface emitter technology used in the VSLY5850 represents a unique die construction in which all the light generated inside the semiconductor is emitted through the top surface of the chip. This greatly reduces side emissions out of the device’s 5 mm T1[#xBE] plastic package, providing the user with a narrow, well-directed emission beam without disturbing fractions towards the sides.
The emitter’s extraordinarily high radiant intensity allows significant intensities to be achieved at low drive currents, reducing power consumption by up to 3x when compared to the next available intensity class of infrared emitters, and extending operating life in battery driven infrared applications.
The VSLY5850 is optimized for IR illumination in CMOS cameras, fire alarm systems, and smoke detectors. The emitter’s fast switching times also make it ideal for use in high modulation frequency applications for long-range data transmission in road cash systems, traffic controls, and license plate flashing. The device’s high optical power allows designers to reduce component count and/or improve performance in these applications.
The new emitter offers an operating temperature from − 40 to + 85 °C and is suitable for high pulse current operation. The VSLY5850 is compliant to RoHS directive 2002/95/EC and WEEE 2002/96/EC, and halogen-free according to the IEC 61249-2-21 definition
Samples and production quantities of the new VSLY5850 emitter are available now, with lead times of eight to 10 weeks for larger orders.
Visit Vishay Intertechnology at www.vishay.com
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