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High-speed IGBT/MOSFET gate drive photocoupler improves efficiency in inverter circuits

May 17, 2011 | Paul Buckley | 222902699
Toshiba Electronics Europe (TEE) has launched an ultra-compact, high-speed, high-current gate drive photo-IC, that can directly drive middle capacity IGBTs or power MOSFETs in an extended operating temperature range of -40 to 125 degrees C.

With a maximum delay time of 200 ns and a transmission delay time difference (PDD) between different devices of only 90 ns, the new TLP352 can help designers to reduce dead time and to improve efficiency of inverter circuits. A low maximum input current of 5 mA minimises power consumption.

The TLP352 IGBT/MOSFET gate drive photocoupler offers a peak output current of ±2.5 A and a minimum Isolation Voltage of 3750 Vrms. Target applications will include AC servo amplifiers, industrial control, domestic solar power systems, digital home appliances, measurement equipment and induction heating products.

Toshiba’s new photocoupler integrates LED, photodetector and the necessary gate drive circuitry into a single DIP package measuring just 9.66 mm x 7.62 mm x 3.65 mm. The latest LED technology ensures excellent longevity and contributes to the device’s guaranteed operating temperature range of -40 to 125 ºC. This makes the TLP352 suitable for industrial designs and other applications that must guarantee operation in extreme ambient temperatures.
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