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Power management

How to estimate the Q of spiral inductors using a planar EM simulator, Part 1 of 2

March 08, 2011 | John M. Dunn and Vladimir Veremey | 222902354
How to estimate the Q of spiral inductors using a planar EM simulator, Part 1 of 2 John M. Dunn and Vladimir Veremey of AWR Corp explains how to estimate the quality factor (Q) of spiral inductors using a planar EM simulator.
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Electromagnetic (EM) simulators are commonly used to model spiral inductors in various planar technologies: for example, silicon and gallium arsenide chips, as well as the module and board level. The most common figure of merit for an inductor is its quality factor, or as it is commonly called, the Q. Unfortunately, accurately getting the Q for an inductor is a difficult task for an EM simulator. Planar simulators have a difficult time correctly calculating the resistive loss of the metal. They rely on impedance boundary conditions, the accuracy of which is suspect at the corners of the conductors. A second problem is that the mesh on the surface of the conductor must be extremely fine, leading to an impractically large mesh. 3D EM simulators have similar problems. The interior of the metal must be excessively meshed to model the resistive loss accurately. Second, most finite element simulators, the most popular 3D simulator, iteratively refine the mesh until the problem converges. Unfortunately, unless care is taken, the simulator can mistakenly determine it has converged; yet, the calculated value of the Q still has significant error.
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