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Low-loss, ultra miniature power MOSFETs deliver improved power efficiency with a smaller form factor in portable devices

April 10, 2012 | Paul Buckley | 222904419
Renesas Electronics has introduced eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets.
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Featuring industry-leading low loss (low on-resistance), the new devices include the 20 V (VDSS) PA2600 and the 30 V PA2601, equipped in ultra compact 2 mm 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.

With the increasing popularity of high-functionality smartphones and user expectations for seamless experiences with these devices, demand is increasing for smaller, thinner form factor devices with lower power consumption that enable longer battery life between charges. To meet these demands, designers are turning to power MOSFETs that feature lower on-resistance for use in charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches, while supporting large currents.

The new PA2600 and PA2601 MOSFETs achieve these demands for further miniaturization and industry-leading low on-resistance in portable devices while reducing mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and overcurrent cutoff switches in RF power amplifiers (amplifiers for high-frequency signals).

A variety of device types, with differing voltages and polarities, such as power MOSFETs, are required to match the specifications of power supplies used in portable devices, including smartphones. In response to these evolving needs, Renesas has been working to reduce on-resistance and create even smaller packages, and provides an extensive lineup of these products.

The PA2600 and PA2601 MOSFETs are equipped in 2 mm 2 mm ultra compact package and achieves an on-resistance of 9.3 m (typical value at VGSS=4.5 V) for the 20 V (VDSS) PA2600 device and 10.5 m (typical value at VGSS=10 V) for the 30 V PA2601 device, enabling power savings in end-use products.

Renesas achieved the use of 2 mm 2 mm ultra compact packages by placing large-area high-performance chips in miniature packages and using an exposed heat sink miniature package, thus efficiently dissipating the package heat to the mounting board. The PA2600 and similar products can reduce the mounting area by approximately 30 percent compared to existing 3 mm 2 mm packages, and the PA2672 and similar products can reduce the mounting area by approximately 40 percent compared to existing 3 mm 3 mm packages. This can reduce the size and weight of end-use products.

Comprising eight devices, the new P- and N-channel power MOSFETs are concentrated in the 12- to 30 V range common in portable devices: 4 P-channel products including the PA2630, 3 n-channel products including the PA2600, and the PA2690, which holds both an N-channel and a P-channel device in a single package. Thus, this lineup can support a variety of applications, including charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches.

The new power MOSFET products are environmentally-friendly, conforming to the RoHS and are halogen-free.


Samples of Renesas Electronics' new PA2600 and PA2601 power MOSFETs will be available in April 2012. Mass production is scheduled to begin in May 2012 and is expected to reach a combined volume of 3,000,000 units per month for all eight products by 1H of FY2013.

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