MOSFET and Schottky diode share the same SOT-563 package
The device features a 50 V, 280 mA P-channel enhancement mode MOSFET and an isolated 40 V, 500 mA low VF Schottky diode.
The MOSFET has a minimum gate threshold of 1.0 V and the Schottky diode has a low forward voltage drop of 0.35 V at 100 mA.
This energy efficient device can be used in a variety of design applications including; DC to DC converters, battery charging circuits in mobile electronics and a host of other power management applications. The SOT-563 package utilizes only 2.89 mm2 of board space and has a low profile of 0.6 mm. The CMLM8205 is the latest in a series of Multi Discrete Modules designed to maximize board space utilization, while at the same time reducing overall energy consumption. The complementary CMLM0205 N-channel MOSFET and 40 V, 500 mA low VF Schottky diode is also available from stock.
Availability and Pricing
Pricing for the CMLM8205 starts at US$ 0.15 each for 3,000 pcs on 7 inch tape and reel. Sample devices are available upon request.
Related Link: www.centralsemi.com
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