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TO-leadless package targets high current applications up to 300-A May 14, 2013
Infineon Technologies AG has introduced the new TO-Leadless package offering reduced package resistance, smaller size as well as improved EMI behavior.
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Infineon introduces TO 247-4 pin package for CoolMOS MOSFETs to improve efficiencies in hard switching topologies
May 7, 2013
Infineon Technologies AG has introduced a TO 247-4 pin package for the company's CoolMOS C7 MOSFETs. The added fourth pin acts as a Kelvin source to effectively reduce the parasitic inductance of the source lead of the power MOSFET. Read more Superjunction MOSFET innovation brings the world's lowest RDS(on) to hard switching applications May 6, 2013
Infineon Technologies has expanded the company's High Voltage portfolio with CoolMOS C7, introducing a 650 V Superjunction MOSFET technology.Read more Quad-MOSFET solution boosts efficiency and eliminates heat sinking in active bridge applications April 30, 2013
Fairchild Semiconductor has introduced the FDMQ86530L 60 V quad-MOSFET which provides designers with an all-in-one package to help meet critical design challenges.
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150-V N-channel power MOSFET offers on-resistance down to 18-mohms for DC/DC applications
April 22, 2013
Vishay Intertechnology, Inc. has released a new n-channel TrenchFET power MOSFET in the thermally enhanced PowerPAK SO-8 package that extends the company's ThunderFET technology to 150 V. Read more
Power MOSFETs are 80 percent smaller than conventional chips while offering better thermal dissipation
TTI Inc, is making available Panasonic’s new CSP MOSFET featuring Power Mount CSP Packaging with a novel pad design and drain clip technology that enables thermal dissipation to be improved by 5% in an 80% smaller footprint than conventional solutions. Step-down switching regulators features built-in power MOSFET to improve smart power management
ROHM Semiconductor has unveiled step-down switching regulators with a built-in 800 mΩ power MOSFET. The BD9G101G series provides 0.5 A DC output with excellent line and load regulation for smart power management in a SOT23 (SSOP6) package. Chip-embedded packaging integrates DC/DC driver and MOSFET VR power stage
Infineon Technologies' DrBlade is claimed to be the first integrated DC/DC driver and MOSFET VR power stage implemented in an innovative chip-embedded package technology.
Cree begins volume production of second generation SiC MOSFET to deliver cost savings to power conversion systems
Cree, Inc. has released the company’s second generation SiC MOSFET enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions.
MOSFET driver IC offers enhanced protection and diagnostics for automotive relay replacements and battery switches
International Rectifier has introduced the automotive-qualified AUIR3200S MOSFET driver IC with comprehensive protection and diagnostic features offering enhanced reliability for relay replacements and battery switch applications.
IGBT/MOSFET gate drive coupler saves power while reducing mounting area by 50 percent
Toshiba Electronics Europe (TEE) has unveiled a photocoupler that will reduce PCB space and power consumption in IGBT and MOSFET designs that need galvanic isolation. Target applications include factory automation equipment, motor drives, digital home appliances and photovoltaic power micro-inverters. Taking a new direction with analog
The launch of the world's first digitally enhanced power analog controller marks a key development for Microchip and according to Stephen Stella, Microchip's Product Marketing Manager Analog & Interface Products, indicates a new direction for Microchip's Analog division.
World's first analog-based power management controller with integrated MCU delivers flexible, efficient power conversion
Microchip is claiming the world’s first digitally enhanced power analog controller with the launch of a device that will expand the scope of Microchip’s diverse range of intelligent DC/DC power-conversion solutions.
300-V power MOSFETs offer benchmark on-state resistance to boost system efficiency in industrial applications
MOSFET with very low resistance aims at power steering applications
Automotive design engineers of power steering systems require solutions that provide higher efficiency and better power control. Fairchild Semiconductor’s
40V N-Channel PowerTrench MOSFET helps designers with these challenges.
3.5-A step-down DC/DC converters integrate 60-V power MOSFET for high-voltage, space-constrained applications
Texas Instruments Incorporated has introduced two 3.5-A step-down DC/DC converters that claim an integrated MOSFET and industry-leading reference accuracy of one percent. 20-V p-channel MOSFET in 3.3-mm square package offers industry-low on-resistance of 4.8-mΩ at a 4.5-V gate drive
Vishay Intertechnology, Inc., has released the Si7655DN, the industry’s first - 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of 4.8 mΩ maximum at a 4.5 V gate drive.
600 V N-channel power MOSFET series adds 17 new devices offering on-resistance down to 39-mohms
Vishay Intertechnology, Inc., has added to the company's E Series of 600 V power MOSFETs with 17 new devices in eight packages that extend the on-resistance range of the family from 39 mΩ to 600 mΩ at 10 V.
New off-line switcher IC family offers line-compensated overload protection and light-load efficiency benefits
Power Integrations has introduced the TinySwitch-4 family, the latest generation of the company’s industry-leading TinySwitch series of off-line switcher ICs. New MOSFETs offer industry-low on-resistance in 2 x 2-mm and 3 x 1.8-mm footprint areas at 4.5-V
Vishay Intertechnology, Inc., has extended the company's TrenchFET Gen III family of p-channel power MOSFETs with a new single 12 V device in the thermally enhanced 2 mm by 2 mm PowerPAK SC-70 package.
Four new 2-A high voltage half-bridge MOSFET drivers offer best-in-class performance
Intersil Corporation has introduced the expansion of the industry leading ‘HIP’ portfolio of MOSFET bridge drivers for power supply and motor drive applications. Mid-voltage MOSFETs provide improved reliability in synchronous rectification applications
With the expansion of the company’s PowerTrench MOSFET family, Fairchild Semiconductor is helping designers to meet power design challenges such as power density and light-load efficiency improvement which are key issues for server, telecom and AC-DC power designers.
Industry's first SiC power MOSFET with internal SiC SBD reduces power loss in inverters
ROHM Semiconductor has developed a 2nd generation high-voltage (1200 V) Silicon Carbide power MOSFET designed for inverters and converters in power conditioners for industrial devices and photovoltaic power generation. New 8-V power MOSFETs lower power consumption and extend battery life
Alpha and Omega Semiconductor Limited (AOS) has added the first 8 V devices to its low voltage power MOSFET product line. Surge stopper integrates ideal diode for comprehensive protection against transient voltages
Linear Technology Corporation has introduced a surge stopper with ideal diode, providing compact and low-loss protection for 4 V to 80 V electronics in automotive, avionics and industrial systems. 100-V linear LED driver aims to de-clutter low-power lighting designs
Diodes Incorporated has introduced the AL5801 linear LED driver which only needs two additional components to enable designers to simplify automotive interior, signage and general lighting control circuits.
8-V N-Channel TrenchFET Power MOSFET offers on-resistance down to 9.4 mΩ at 4.5-V in the 2-mm by 2-mm footprint area
Vishay Intertechnology, Inc. has introduced a new 8 V n-channel TrenchFET power MOSFET which claims to feature the industry’s lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.New 30-V power MOSFET slashes conduction losses
Alpha and Omega Semiconductor Limited has released a sub-milliohm, energy efficient, 30V n-channel Power MOSFET housed in a DFN 5 x 6 mm package. The AON6500 enables high performance power switching in industrial motor control and advanced power supply applications.
Diode controller provides negative input protection and low current operation
Linear Technology Corporation has introduced a high voltage ideal diode controller that offers a simple low loss replacement to Schottky diodes, along with key features targeted for automotive, avionics as well as solar applications.
Power MOSFET shrinks board space with chip scale packaging technology
Alpha and Omega Semiconductor Limited (AOS) has released the a high performance 30 V p-channel Power MOSFET offered in a compact 1.6 mm x 1.6 mm chip scale package.
Power MOSFET is integrated with RF gate driver in a half-bridge topology
TrenchMOS power transistors tested for high reliability
NXP Semiconductors has introduced a family of automotive power MOSFETs based on the company's proprietary Trench 6 technology, featuring extremely low RDSon, high switching performance, and outstanding quality and reliability. Fully AEC-Q101 qualified, NXP's new automotive-grade MOSFETs have successfully completed extended lifetime testing at 175˚C for more than 1,600 hours – significantly exceeding Q101 requirements – as well as offering extremely low PPM levels.
High power DC solid state relays deliver load voltage ratings from 42-V to 1700-V
Teledyne Relays has released a range of Power DC Solid State Relays with load voltage ratings from 42 V to 1700 V, with load currents ranging from 5 A to 150 A to the company's Solid-State Power Relays catalog.
New Kelvin contactor supports high power applications
Multitest is launching the company's latest Kelvin contactor which is a state-of-the-art solution for high-power applications of 500+ Amperes.
60-A multi-chip module family enables designers to meet stringent energy savings standards
Fairchild Semiconductor has developed the FDMF68xx Gen III DrMOS multi-chip module (MCM) family to meet the demands of new energy standards combined with new system specifications for blade servers, high performance notebooks, gaming consoles and POL modules.
Low-loss, ultra miniature power MOSFETs deliver improved power efficiency with a smaller form factor in portable devices
Renesas Electronics has introduced eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets.
Superjunction power MOSFET integrates fast body diode, meets AEC-Q101
Infineon expands its Automotive power semiconductor lineup with the 650V CoolMOS CFDA. According to the vendor, this is the industry's first Superjunction MOSFET solution with Integrated Fast Body Diode to meet the highest Automotive qualification standard AEC-Q101. The 650V CoolMOS CFDA is particularly designed for resonant topologies such as battery charging, DC/DC converters and HID (High Intensity Discharge) Lighting, also in hybrid and electric vehicles.
ON Semiconductor introduces high efficiency wireless charging ICs
ON Semiconductor has released the NMLU1210, an innovative power MOSFET integrated circuit (IC) for wireless charging applications in portable products such as cell phones, media tablets, portable media players, digital still cameras and GPS units.
High-switching frequency capability enables integrated device to use thinner inductors
Fairchild Semiconductor's, FDMF6708N Generation II XS DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The device is ideal for designers facing the challenge of reducing inductor height in power supply designs in order to meet the low-profile, thinner end-system demands of applications such as Ultrabook devices and notebooks.
Compact 55-V, 1.5-A step-down regulator for industrial and automotive applications
MOSFET controller enables PSUs to exceed energy star efficiency goals
Enabling flyback power supply designers to replace inefficient Schottky rectifiers with a MOSFET driven as an ideal diode, the ZXGD3105N8 synchronous MOSFET controller from Diodes Incorporated can achieve a standby power consumption for set-top boxes of less than 100mW and full-load efficiencies greater than 87%.
Hot swap controller ensures safe, continuous system operation with advanced digital thermal emulation
Vicor has unveiled the new Picor Cool-Swap PI2211 hot swap controller and circuit breaker (operating range: +0.9 to +14 V), featuring Picor’s advanced True-SOA and Glitch-Catcher technologies. The Picor Cool-Swap PI2211 claims to provide superior backplane and system protection while reducing board space and design complexity.
Quad digital power supply manager features powerful GUI to speed development
Linear Technology Corporation has introduced a power supply manager with EEPROM for complete digital management of power supply systems with four or more power rails. The LTC2974 utilizes an I2C interface and PMBus command set to monitor and control positive or negative supplies to provide rapid troubleshooting and debug capabilities during power system design, development, production and failure analysis.
30-V p-channel chipscale MOSFETs claim industry's lowest on-resistance for 30-V in 1.6-mm by 1.6-mm size
Vishay Intertechnology, Inc. has expanded the company's MICRO FOOT TrenchFET Gen III power MOSFET family with two p-channel 30 V devices that claim to set new benchmarks for size and on-resistance. The new Si8497DB is the industry’s first 30 V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30 V chipscale device in the 1.6 mm by 1.6 mm form factor.
New AOS' medium voltage MOSFET enables higher efficiency solutions
Alpha and Omega Semiconductor Limited (AOS) has released AON6270 and AON6280, the flagship devices in its new 75 V and 80 V AlphaMOS (a MOS) medium voltage portfolios. The new product expands AOS' medium voltage MOSFET portfolio and enhances its solutions for high performance power supplies.
Ultra-high performance 1200-V MOSFETs claim superior performance than Si IGBTs and Superjunction MOSFETs
Alpha and Omega Semiconductor Limited (AOS) and SemiSouth Laboratories are jointly demonstrating UniSiC, a new 1200 V, 90 mΩ MOSFET in a TO262 package, to meet the growing need for energy efficient switching devices for high performance power conversion applications in the alternative energy, industrial and consumer segments. The reduction in form factor and figures-of-merit put this 1200 V MOSFET device in a class by itself.
Surge stopper shields sensitive electronics from transients beyond 100-V
Linear Technology Corporation has introduced an overvoltage protection controller that provides overvoltage and overcurrent protection to high-availability electronic systems. Supply voltages surge whenever currents flowing through long inductive power buses change abruptly.
TI launches fastest 4-A and 5-A two-output MOSFET drivers for telecom and server power supplies
Texas Instruments Incorporated is expanding the company's MOSFET driver portfolio with three next-generation two-output gate drivers that improve efficiency and reliability in high-density isolated power supplies. The UCC27210 and UCC27211 are the industry’s first 120-V boot, high- and low-side, two-output MOSFET drivers to provide up to 4-A output current, while handling -10 volts of direct current (V DC ) immunity on the driver inputs.
650V rated power MOSFETs boast lowest on-state resistance at 0.029 Ohms
The STW88N65M5 MDmesh V MOSFET introduced by STMicroelectronics features an on-state resistance of 0.029 Ohms, the lowest in the industry for 650V devices in the standard TO-247 package according to the manufacturer. This betters ST's previous industry benchmark of 0.038 Ohms, a 23% improvement.
MOSFET controller boosts PSU efficiency for Energy Star rating
PowerTrench MOSFET offers up to 40 percent space savings and increased efficiency
Fairchild Semiconductor has developed the FDMB2307NZ PowerTrench MOSFET to provide designers of mobile products with the increased efficiency needed in a form factor that significantly reduces design space.
Ultra-miniature, photocouplers drive IGBTs and MOSFETs at extended temperatures
Toshiba Electronics Europe (TEE) has launched two new ultra-miniature IGBT/MOSFET Gate drive photocouplers that claims to offer guaranteed performance at temperatures ranging from -40 to 125°C.
Silicon carbide power devices in chip form for efficient power electronic modules
Cree has released what the company claims to be the industry's first fully qualified SiC MOSFET power devices in “bare die” or chip form for use in power electronics modules. The SiC Z-FET MOSFETs and diodes are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices.
Infineon rolls auto-qualified power MOSFETs in TO package
Infineon Technologies has introduced automotive qualified lead-free power MOSFETs for TO package types. Based on the combination of innovative packaging technology and Infineon's thin wafer process technology, the new 40V OptiMOS T2 power MOSFETs offer best-in-class specifications.
Dual output synchronous step-down controller produces 1.5-V OUT from up to 24-V IN at 2-MHz
Linear Technology Corporation has introduced a high frequency controlled on-time dual output synchronous step-down DC/DC controller with differential output voltage sensing and clock synchronization. The controlled on-time, valley current-mode architecture enables a fast transient response by increasing its operating frequency during a transient event, enabling the LTC3838 to recover from a large load step in only a few clock cycles.
P-channel MOSFET offers increased power efficiency space-starved portable products
Helping to increase battery efficiency and reduce board space, the miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET from Diodes Incorporated has been introduced to meet the requirements of designers of space-starved portable products including smartphones and tablet computers.
AEC-Q100 qualified 2.5-A buck regulator operates during cold crank conditions
Intersil Corporation has released a new 2.5 A step-down regulator that automatically boosts the input voltage to maintain regulation.
N-Channel and P-Channel power MOSFETs are first to feature on-resistance ratings down to 1.2 V in industry's smallest chipscale package
Vishay Intertechnology, Inc., has introduced the industry’s first p-channel power MOSFET in the industry’s smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance ratings down to 1.2 V in this package size. The 8 V n-channel Si8802DB and p-channel Si8805EDB TrenchFET power MOSFETs in the MICRO FOOT package occupy up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance.
Compact, automotive-qualified 600-V gate drive IC simplifies and shrinks designs
International Rectifier has introduced the AUIRS2332J 600 V three-phase gate driver IC for automotive high-voltage motor drives for electric (EV) and hybrid electric vehicle (HEV) applications.
TI spotlights two phase-dimmable, offline LED lighting drivers
DC/DC controller generates positive or negative regulated voltages
Linear Technology Corporation has introduced a wide input range DC/DC controller for boost, SEPIC and inverting power supply applications, capable of generating either positive or negative regulated output voltages.
Single-phase digital POL chipset offers rapid development of smart power management solutions
ZMD AG (ZMDI) is launching a configurable true-digital, high-performance PWM controller for non-isolated DC/DC POL supplies. The ZSPM1000 operates as synchronous step-down converter in a single-rail and single-phase configuration.
Intersil claims world's first high speed, dual channel 6-A MOSFET driver
Intersil Corporation has introduced what the company claims is the industry's first dual channel 6 A MOSFET driver capable of driving two outputs each with 6 A of peak drive current. The ISL89367 provides designers with an integrated solution for high speed driving of large, high current MOSFETs.
EPC expands eGaN FET family with second generation 40-V, 16 milliohm power transistor
8-V MOSFET claims lowest on-resistance for a P-channel device in the 1.6 mm by 1.6 mm footprint area
Vishay Intertechnology has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry’s lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.
NXP unveils ultra-compact power management solution for portable devices
NXP Semiconductors N.V. has unveiled the PBSM5240PF, an ultra-compact Medium Power transistor and N-channel Trench MOSFET housed in a leadless DFN2020-6 (SOT1118) plastic package. Measuring 2 x 2 mm and with a height of 0.65 mm, the DFN2020-6 (SOT1118) has been designed in response to the industry trend for miniaturization in high-performance consumer products such as mobile devices.
Synchronous step-down DC/DC controller uses nonlinear control for tight output voltage regulation
Linear Technology Corporation has introduced a fixed frequency synchronous step-down DC/DC controller with nonlinear control, differential output voltage sensing and clock synchronization. Nonlinear control minimizes the output voltage excursion during load transient events by increasing the operating frequency, allowing the LTC3867 to recover from a large load step in only a few cycles.
Synchronous step-down DC/DC controller supports wide operating junction temperatures
Linear Technology Corporation has introduced the H- and MP- grade versions of the company’s LTC3851A, a wide input voltage range (4 V to 38 V) synchronous step-down DC/DC controller that encompasses a broad range of applications, including most intermediate bus voltages and battery chemistries. The onboard MOSFET gate drivers enable the use of high power external MOSFETs to produce output currents up to 25 A with output voltages ranging from 0.8 V to 5.5 V, ideal for point-of-load requirements.
Demand for energy efficiency helps power semiconductor market to bounce back
Toshiba beefs up MOSFET offerings in DPAK+ package
Toshiba Electronics Europe (TEE) has announced a range of rugged automotive power MOSFETs that combines the company's latest trench MOS process with its enhanced DPAK+ package technology. The new MOSFETs will significantly improve application performance while reducing PCB real estate and noise in a range of automotive applications, the vendor promises.
Power stage dual asymmetric MOSFETs focus on need for high power density and ease of design
Fairchild Semiconductor has developed the FDMS36xxS family of power stage dual asymmetric MOSFET modules to address two main challenges facing power supply engineers. The new devices reduce the amount of space they use and increase power density. The benefits are especially important in notebook, point-of-load, server, gaming and telecommunication applications.
MOSFET pair reduces DC motor losses
For use in low voltage single- and three-phase brushless DC (BLDC) motor control applications, the DMC4040SSD complementary dual MOSFET from Diodes Incorporated features matched N-channel and P-channel Rds(on) performances to ensure DC losses in motor loads are balanced and minimized.
Ultra-compact PQFN2x2 power MOSFET focuses on low power applications
International Rectifier is extending the company's packaging portfolio with the introduction of a PQFN 2 mm x 2 mm package featuring IR's latest HEXFET MOSFET silicon that delivers an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, and notebook PC, server and network communications equipment.
STMicroelectronics boosts accessibility and value of space-grade power electronics
New DrMOS device family offers 94 percent efficiency in 6-mm x 6-mm form factor
New STMicroelectronics power MOSFETs driving up vehicle electrical efficiency
Better energy efficiency as well as size and cost benefits are what STMicroelectronics promises for customers of its extended line of STripFET VI DeepGATE power MOSFETs. The chipmaker has added nine new automotive-grade devices to the product line. The new power transistors aim at applications in comfort, body and power-train electronics.
NXP releases new 25-V and 30-V high-performance N-channel, logic-level MOSFETs
NXP Semiconductors N.V. has begun shipping 15 new devices in the NextPower range of 25 V and 30 V MOSFETs in its LFPAK package. The latest additions to NXP’s power MOSFET portfolio deliver balanced characteristics across the six most important parameters for high-performance, high-reliability switching applications, while providing the industry’s lowest RDS(on) with sub-1 mΩ types in both 25 V and 30 V.
60-V MOSFET offer lower conduction and switching losses
Fairchild Semiconductor has developed the FDMS86500L N-Channel, PowerTrench MOSFET for designers that need a MOSFET with lower conduction and switching losses in order to raise efficiency in their designs. The device is designed specifically to minimize conduction loss, switch node ringing, and to improve the overall efficiency of DC-DC converters.
Space saving MOSFETs deliver cooler running than larger packaged devices
40-A DrMOS solution enables operating frequencies in excess of 1-MHz and better than 93 percent efficiency
Vishay Intertechnology, Inc., has unveiled an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile, thermally enhanced PowerPAK MLP 6x6 40-pin package.
Robust automotive-grade buck regulator ICs with wide input voltage range
Robust automotive-grade buck regulator ICs with wide input voltage range
The new A8582 and A8583 from Allegro MicroSystems Europe are automotive-grade buck regulator ICs with high switching frequency and output current and a wide input voltage range. Each device integrates a low-resistance high-side N-channel MOSFET, and incorporates current-mode control to provide excellent loop stability and transient response.
Automotive power MOSFET chipset is optimized for high power density DC-DC applications
International Rectifier has introduced an automotive DirectFET2 power MOSFET chipset optimized for DC-DC applications used in internal combustion engine (ICE) cars, hybrid and electric vehicles.
Expanded MOSFET driver family offers low-side devices with peak output currents from 2-A to 4.5-A
Microchip Technology has expanded the company's MOSFET driver family of products. Building upon Microchip's low-side MCP14E3/4/5 4.5 A MOSFET drivers, Microchip is introducing the new low-side MCP14E6/7/8 2 A and MCP14E9/10/11 3 A drivers.
6-A N-channel MOSFET gate driver operates over a 55 to 125 degrees C junction temperature range
Linear Technology Corporation has introduced a new high reliability (MP-grade) version of the LTC4441, a 6A N-channel MOSFET gate driver that operates over a -55 to 125°C operating junction temperature range. The high power driver is designed to increase the output power and efficiency of a DC/DC controller, enabling it to drive high power N-channel MOSFETs or multiple MOSFETs in parallel.
40-V N-channel MOSFET transistor in a CSOIC16 SMD package offers high temperature benefits
New PWM controllers integrate all four primary-side bridge MOSFET gate drivers
National Semiconductor Corp., has unveiled what the company claims is the industry’s first full-bridge pulse width modulation (PWM) controllers to integrate all four primary-side bridge MOSFET gate drivers. The LM5045 and LM5046 are well-suited for delivering higher efficiency and higher power density in quarter-brick and eighth-brick power modules used in a variety of high input voltage communications infrastructure applications.
Flexible single input voltage DC-DC regulators target high current applications
International Rectifier has launched the iP1837 and iP1827 iPowIR voltage regulators for point-of-load (POL) applications including servers, netcom, data storage and telecom equipment requiring high current.
100-V synchronous N-channel MOSFET drivers operate from -40 to 150 degrees C
Linear Technology Corporation has introduced the H-grade version of the LTC4444/-5, a high-speed, high input supply voltage (100 V), synchronous MOSFET gate driver designed to drive upper and lower power N-channel MOSFETs in synchronous rectified converter topologies.
Dual 20-V P-channel TrenchFET Gen III Power MOSFET offers industry’s lowest on-resistance down to 54-mohms at 4.5-V
Vishay Intertechnology, Inc., has introduced a new dual 20 V p-channel TrenchFET Gen III power MOSFET with an 8 V gate-to-source voltage that claims to feature the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.
Maxim unveils 850-kHz/500-kHz SMBus-programmable battery chargers
Maxim Integrated Products has introduced the MAX17435/MAX17535 SMBus battery chargers capable of operating at 850 kHz and 500 kHz, respectively. The SMBus interface enables programming of the charge settings without changing external components and maximizes design flexibility.
Shutter driver targets continuous pulsed applications
Analog Modules, Inc. is releasing its Model 823B Pockels Cell/Shutter Driver which is designed for continuous pulsed applications.
MSC offers new compact N-channel power MOSFETs from Renesas
MSC is now offering the new NP75N04YUK N-channel power MOSFET from Renesas Electronics which has the capability to handle current flows up to 75 A and an on-resistance of only 3.3 mΩ.
8-V P-channel power MOSFET offers on-resistance down to 16 mΩ in PowerPAK SC-70 2 mm by 2 mm footprint
Vishay Intertechnology, Inc., has introduced a new 8 V p-channel TrenchFET power MOSFET that claims to have the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.
High-voltage power MOSFET delivers high efficiency and low power consumption
Renesas Electronics has introduced a new high-voltage N-channel power MOSFET, the RJK60S5DPK, for power supply units. The new power MOSFET delivers high efficiency and low power consumption for PC servers, communication base stations, and solar power generation systems.
High current gate driver aims to minimize switching losses
The 10-Amp gate driver from Diodes Incorporated has been designed to ensure ultra fast switching of power MOSFET and IGBT loads in power supply, solar inverter and motor drive circuits. With its emitter follower configuration delivering propagation delay times of less than 10 ns and rise and fall times of less than 20 ns, the ZXGD3005E6 non inverting gate driver will reduce switching losses, simplify circuit design and improve overall system reliability.
The Top 10 Most Popular Power Management Technical Articles of 2010
Linear constant current driver provides versatile control for LED applications
DirectFET MOSFET chipset is tailored for cost sensitive DC-DC applications
International Rectifier has introduced 30 V DirectFET MOSFET chipset technology tailored for cost sensitive 19 V input synchronous buck applications such as notebooks.
Diodes releases first p-channel MOSFET in thermally enhanced PowerDI 5060 package
Cissoid rolls high-temperature 30V small-signal MOSFET
High-temperature semiconductor specialist Cissoid introduced a new product in their “planet” family of high temperature transistors and switches. Mars is a high temperature 30V small-signal p-channel MOSFET transistor suitable for long term reliable operation from -55°C up to +225°C.
30-V MOSFET claims industry's lowest RDSon
Ultra-compact photocoupler handles industrial applications operating to 125 degrees C
Toshiba Electronics Europe (TEE) has announced an ultra-compact photocoupler that will help engineers to address MOSFET and IGBT gate drive requirements in inverters, induction heating designs and other applications requiring safety isolation and operation at high ambient temperatures.
Gate driver optocoupler provides lower power consumption, faster switching speeds
Fairchild Semiconductor has developed the FOD3184 , which is a 3 A output current, high speed MOSFET/IGBT gate driver optocoupler with a nearly 50% reduction in propagation delay times and 13% lower power consumption compared to the popular FOD3120 gate driver. The new device is ideal for high frequency driving of power MOSFETs and IGBTs at frequencies up to 250 kHz.
Asymmetric dual TrenchFET Power MOSFET offers industry-low on-resistance down to 3.3 mOhms at 10-V
Vishay Intertechnology, Inc., has introduced the first asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package to utilize TrenchFET Gen III technology, reducing on-resistance by 43% when compared to previous-generation devices, while offering higher maximum current and enabling increased efficiency. Claiming the industry's lowest on-resistance for this device type, the SiZ710DT combines a low- and high-side MOSFET in one compact device, saving space over using two discrete solutions in DC-to-DC converters.
25-V and 30-V PQFN power MOSFETs deliver high density solution for industrial POL applications
International Rectifier has introduced a family of 25 V and 30 V devices featuring IR’s latest HEXFET MOSFET silicon in a new performance PQFN 3 x 3 package that delivers a high density, reliable and efficient solution for DC-DC converters in telecom, netcom, and high-end desktop and notebook computer applications.
600-V, 47-A N-Channel Power MOSFET claims industry's lowest on-resistance figure
100-V isolated flyback DC/DC controller operates up to 150 degrees C
Linear Technology Corporation has unveiled a high input voltage isolated flyback DC/DC controller with guaranteed operation for junction temperatures as high as 150 degrees C.
2-MHz synchronous step-down DC/DC controller offers differential output sensing and clock synchronization
Linear Technology Corporation has introduced a high frequency controlled on-time synchronous step-down DC/DC controller with differential output voltage sensing and clock synchronization. The controlled on-time, valley current-mode architecture forces a very fast transient response by increasing its operating frequency during a transient event, allowing the LTC3833 to recover from a large load step in only a few cycles.
60-V input synchronous step-down DC/DC controller draws 50-uA in battery-powered systems
Linear Technology Corporation has introduced a high voltage synchronous step-down DC/DC controller that draws only 50 µA in standby mode with the output in regulation. The LTC3891's 4 V to 60 V input supply range is designed to protect against high voltage transients, continue operation during automotive cold crank and cover a broad range of input sources and battery chemistries.
Synchronous boost controller offers up to 98 percent efficiency, eliminates heat sink
Linear Technology Corporation has unveiled a synchronous step-up DC/DC controller that replaces the boost diode with a high efficiency N-channel MOSFET. The device eliminates the heat sink normally required in medium to high power boost converters.
TI combines analog protection with digital monitoring with expanded power protection portfolio
POL converters deliver plug-and-play efficiency boost
Multi-topology LED driver raises performance of high brightness lighting systems
48-V and 12-V high-side Active ORing solutions address redundant intermediate bus demands
Picor is making two additions to the company’s Cool-ORing Active ORing product family. Primarily intended for 12 V and 48 V high-side redundant bus applications, the PI2127 is a full-function Active ORing solution and the PI2007 is a universal high-speed discrete Active ORing controller. Both address a broad range of redundant intermediate bus requirements for high-availability systems such as servers, high-end computing, telecom and communications infrastructure systems.
30-V P-channel power MOSFETs offer design flexibility benefits
International Rectifier has introduced a new family of -30 V devices featuring IR's latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.
DIOFETs boost efficiency, increase reliability of PoL converters
Diodes Incorporated has introduced the first products from its proprietary DIOFET process that monolithically integrates a power MOSFET and anti-parallel Schottky diode into a single die. Used in the low side MOSFET position of synchronous buck point-of-load (PoL) converters, the DMS3014SSS and DMS3015SSS improve the efficiency and lower the operating temperature of fast switching PoL converters in high volume computing, telecom and industrial applications.
Seven power MOSFETs target compact vehicle electronic control units
Renesas Electronics has introduced seven new power metal-oxide-semiconductor field-effect-transistor (MOSFET) products equipped in HSON packages for use in automotive electronics control units for applications including direct injection engine management and electric pump motor control.
IR expands family of automotive-qualified MOSFETs featuring low on-state resistance
International Rectifier has expanded its family of automotive-qualified power MOSFETs for applications requiring low on-state resistance (RDS(on)) including on-board power supplies and heavy loads on Internal Combustion Engine (ICE) platforms, micro and full hybrid platforms
N-Channel chipscale power MOSFET is first with a sub-1-mm2 outline
Vishay Intertechnology, Inc., is claiming the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm2 outline.
Infineon Power MOSFET features very low on-resistance
Infineon Technologies has introduced a 30V Power MOSFET for high current automotive applications. The vendor claims the transistor features the world's lowest R DS(on).
150-V low RDS(ON) MOSFET offers high performance in isolated DC-DC applications
Micrel expands hyper speed control family of synchronous DC-DC controllers
1.5-A buck converter offers space saving benefits
HB LED driver targets high-power automotive lighting demands
Maxim Integrated Products has introduced a high-voltage HB LED driver for boost, buck-boost, and buck configurations.
Power MOSFET applies low-on-resistance technology optimized for higher-voltage devices
Vishay Intertechnology, Inc. has unveiled the first TrenchFET power MOSFET built on a new low-on-resistance technology optimized for higher-voltage devices. The new ThunderFET SiR880DP is the first 80-V power MOSFET with an on-resistance rating at a 4.5-V gate drive.
MOSFET controller raises efficiency of AC-DC converters
Diodes Incorporated has unveiled a synchronous MOSFET controller for driving a MOSFET in place of a Schottky diode in the secondary side of flyback and resonant converters.
Hot Swap controller protects low power boards
Linear Technology Corporation has introduced a Hot Swap controller for protecting low power boards with load supply voltages ranging from 2.9 V to 15 V.
WLED driver integrates a 48-V MOSFET to provide a complete backlighting solution
Maxim Integrated Products has introduced a six-string WLED driver that provides a complete backlighting solution for notebooks and netbooks. The high-performance step-up controller integrates a 48 V MOSFET capable of driving up to 13 LEDs/string.
DC/DC uModule regulator delivers 15-A from inputs down to 1.5-VIN
Linear Technology Corporation has unveiled a complete switch mode DC/DC µModule point-of-load regulator capable of generating its own 5 V N-channel MOSFET gate drive for efficient voltage conversion from 3.3 VIN or less to loads as low as 0.8 V at up to 15 A.
Rugged MOSFETs support VoIP communication equipment
Diodes Incorporated has extended its MOSFET product line with the introduction of 60 V N-channel devices tailored for use in VoIP communication equipment.
New scan driver IC provides power solution for GOA notebook LCD panels
Maxim Integrated Products has introduced a complete power solution for gate-on-array (GOA) notebook LCD panels.
Miniature SOT963 packaged devices support low power, ultra portable electronics
Diodes incorporated has introduced bipolar transistor, MOSFET and TVS devices in the ultra small SOT963 package, which achieve the same or better performance of much larger packaged parts.
20-V NPN and PNP bipolar transistors offers increased power density
Diodes Incorporated is delivering increased power density and efficiency of power management circuits with the introduction of its 20 V NPN and PNP bipolar transistors packed in a DFN1411-3 surface mount package.
Three-phase brushless DC motor pre-driver IC targets office automation applications
Video shows how co-packaged device reduces space for Power MOSFETs in DC/DC converters
To assist customers in understanding how co-packaging high- and low-side MOSFETs in one compact device can save on space and costs for dc-to-dc converters, Vishay Intertechnology, Inc., has added a new streaming video to its website highlighting the company's SiZ700DT PowerPAIR dual asymmetric power MOSFET solution.
Cissoid introduces family of high temperature 80V power MOSFETs
Online MOSFET thermal simulation tool offers increased simulation accuracy
Low ON-Resistance MOSFET targets high-efficiency switching applications
Toshiba Electronics Europe (TEE) has introduced a 60 V semi-power MOSFET within its line-up of small signal MOSFET (S-MOS) devices.
MSC extends power device portfolio with 900-V HiPerFET Power MOSFET
PSE controller with integrated MOSFET delivers up to 40-W to PDs
Maxim Integrated Products has introduced the MAX5971A single-port, power-sourcing equipment (PSE) controller for IEEE(R) 802.3af/at-compliant, high-power, power-over-Ethernet (PoE+) applications.
30-V p-channel TrenchFET Gen III power MOSFET fits in PowerPAK 1212-8 for first time
Vishay Intertechnology, Inc. , has unveiled the first 30-V p-channel TrenchFET Gen III power MOSFET in the PowerPAK 1212-8 package.
New p-channel TrenchFET Gen III power MOSFET fits chipscale MICRO FOOT package
Vishay Intertechnology, Inc., has introduced the first p-channel TrenchFET Gen III power MOSFET in the chipscale MICRO FOOT package.
Dual complementary N and P-Channel MOSFETs save board space
Central Semiconductor Corp. has released dual complementary N and P-Channel MOSFETs that feature a 20 V, 160 mA N-Channel and a 20 V, 140 mA P-Channel MOSFET packaged in the ultra miniature SOT-963 surface mount case.
Overvoltage/overcurrent protection controller safeguards low voltage portable devices
Linear Technology Corporation has introduced a 2.5 V to 5.5 V overvoltage and overcurrent protection controller designed to safeguard low voltage, portable electronics from damaging input voltage transients and current surges.
12-V power MOSFET lowers on-resistance up to 32 percent in PowerPAK SC-70
Vishay Intertechnology, Inc., has introduced a new dual 12-V p-channel TrenchFET Gen III power MOSFET and is claiming the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2-mm by 2-mm footprint area.
25-V DirectFET chipset claims efficiency benefits for high frequency DC-DC switching applications
International Rectifier has introduced the IRF6706S2PbF and IRF6798MPbF DirectFET MOSFET chipset that provides best-in-class efficiency for 12 V input synchronous buck applications including servers, desktops, and notebooks.
500-V n-channel power MOSFET offers improved switching speed
Vishay Intertechnology, Inc., has unveiled a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices.
DC-to-DC switching regulators simplify Power Bus and point-of-load power designs
Dual output synchronous step-down DC/DC controller draws 50 µA in battery-powered systems
Linear Technology Corporation has introduced the LTC3890/-1, a high voltage dual output synchronous step-down DC/DC controller that draws only 50 µA when one output is active and 60 µA when both outputs are enabled.
Power conversion IC family targets flyback power supplies
MOSFET and Schottky diode share the same SOT-563 package
Central Semiconductor Corp. has released the CMLM8205 Multi Discrete Module in the SOT-563 surface mount package.
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