March 22, 2012 International Rectifier has introduced an automotive-qualified AUIR3240S battery power switch for the combustion-engine shut-off and restart function (Stop-Start system) that can help reduce fuel consumption in automotive vehicles by up to 15 percent. Read more

February 14, 2012 International Rectifier has extended the company’s PowIRstage family of integrated devices with the introduction of the IR3551, optimized for use in next-generation servers, desktop PCs, graphics cards, and communication systems. Read more

February 8, 2012 NXP Semiconductors is showcasing a wide range of highly efficient Power MOSFETs at APEC 2012 which can be used alongside the company's GreenChip switched-mode power supply (SMPS) controller ICs, to enable slimmer power supply, adapter and charger designs. Read more

February 7, 2012 Cree, Inc. has expanded the company’s design-in support for the industry’s first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree’s SiC Z-FET MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices. Read more

February 7, 2012 SemiSouth Laboratories, Inc., has launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses. Read more

February 7, 2012 International Rectifier has introduced a versatile family of CHiL digital PWM controllers that shrinks footprint and improves efficiency in a variety of mid-range to high-end and extreme server, desktop, and computing applications. IR’s six new devices meet Intel VR12 and VR12.5 and AMD SVI1 and SVI2 specifications, and support multiphase designs from 1 to 8 phases operating 1 to 2 loops. Read more

February 7, 2012 Toshiba Electronics Europe (TEE) has unveiled a new family of ultra-high-efficiency, high-speed MOSFETs that deliver improvements in trade-off characteristics between low on resistance (RDS(ON) ) and low input capacitance (C iss ). The new trench MOSFET series will have voltage ratings from 60 V to 120 V and will allow designers to reduce the size and improve the efficiency and performance of secondary synchronous rectification in switch mode power supplies. Read more

January 30, 2012 International Rectifier has launched the AUIR0815S automotive-qualified IC featuring high output current in excess of 10 A to drive large IGBTs or MOSFETs in inverter stages for the power train of hybrid and electrical vehicles. Read more

January 26, 2012 Texas Instruments Incorporated has expanded the company’s high-voltage point-of-load product line by introducing what the company claims is the industry’s first 100-V synchronous buck regulator with integrated MOSFETs. The 600-mA LM5017 is the first in a new family of step-down switching regulators that reduce PCB area and system cost while improving high-voltage reliability in telecommunication, industrial, smart grid and automotive systems. Read more

January 24, 2012 International Rectifier has introduced the AUIR0815S automotive-qualified IC featuring high output current in excess of 10 A to drive large IGBTs or MOSFETs in inverter stages for the power train of hybrid and electrical vehicles. Read more

January 10, 2012 Alpha and Omega Semiconductor (AOS) has introduced the AON7418 to add to the company’s growing portfolio of power MOSFETs in small, ultra-thin packages. The new device provides low on-resistance that is optimized for demanding applications such as tablet PCs, eReaders, notebooks, telecom and networking. Read more

December 21, 2011 Linear Technology Corporation has introduced a high frequency controlled on-time synchronous step-down DC/DC converter with differential output voltage sensing and clock synchronization. The controlled on-time, valley current mode architecture enables a fast transient response by increasing its operating frequency during a transient event, allowing the LTC3613 to recover from a large load step in only a few clock cycles. Read more

December 19, 2011 The global power semiconductor market will grow by 5.0% in 2012 to $32 billion, according to market analyst, IMS Research, which is cutting the company's previous forecast of more than 8% due to global economic uncertainties and inventory being flushed from the supply chain. The market, which grew by 37% in 2010, is forecast to return to double-digit growth in 2013. Read more

December 12, 2011 Diodes Incorporated has introduced the company's first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130 ºC/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280 ºC/W. Read more

December 9, 2011 Cree has released what the company claims to be the industry's first fully qualified SiC MOSFET power devices in “bare die” or chip form for use in power electronics modules. The SiC Z-FET MOSFETs and diodes are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices. Read more

December 5, 2011 International Rectifier has expanded the company's PowIRstage family of integrated devices with the introduction of the 40 A IR3553, optimized for next-generation servers, consumer and communication systems. Read more

December 1, 2011 Diodes Incorporated has introduced the company’s first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, the package supports a power dissipation of up to 1 W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280ºC/W. Read more

December 1, 2011 Toshiba Electronics Europe (TEE) has launched its next generation of medium power MOSFETs for power management applications in mobile devices. The ultra-compact SSM3J13xTU MOSFETs meet the low-power, high-speed, high-current switching requirements of power peripheral circuits in applications such as mobile phones, digital cameras and other battery operated equipment. Read more

November 21, 2011 Linear Technology has unveiled a synchronous buck-boost converter that delivers up to 2 A of continuous output current from a wide range of power sources from single-cell Li-Ion to 24 V/28 V industrial rails to 40 V automotive inputs. The LTC3115-1’s 2.7 V to 40 V input and output range provides a regulated output with inputs above, below or equal to the regulated output. Read more

November 15, 2011 Enpirion has added a new member to the company’s power IC portfolio targeted at embedded computing as well as solid-state drives (SSDs). The Enpirion EN5339 3 Amp power system-on-a-chip (PowerSoC) integrates the controller, power MOSFETs, compensation network and inductor into one highly compact solution that significantly reduces the traditional engineering analysis and design effort associated with discrete DC-DC converter designs. Read more

November 15, 2011 Vishay Intertechnology, Inc., is expanding its PowerPAIR family of dual asymmetric power MOSFETs for low-voltage DC/DC converter applications with new devices that expand the series' voltage and package footprint options. The new devices make Vishay the only supplier to offer 3 mm by 3 mm, 6 mm by 3.7 mm, and 6 mm by 5 mm PowerPAIR form factors. Read more

November 10, 2011 Alpha and Omega Semiconductor Limited (AOS) claims to be setting new standards in power density and energy efficiency for power MOSFETs in an ultra-thin (0.8 mm) DFN 3x3 package. The devices are implemented on AOS' proprietary AlphaMOS technology. Read more

October 31, 2011 Vishay Intertechnology, Inc, has introduced the first of the new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package. Read more

October 11, 2011 Summit Microelectronics has expanded its family of programmable DC-DC products with the SMB220 and SMB221 integrated 10 A and 20 A buck regulators . The new products deliver unparalleled integration with built-in MOSFETs, digital programmability and non-volatile configuration. Read more

October 10, 2011 Infineon Technologies AG has produced the first chips on a 300-mm thin wafer for power semiconductors at the Villach site in Austria making Infineon the first company in the world to achieve this objective. Read more

October 4, 2011 Texas Instruments Incorporated has introduced two 20-V step-down voltage regulators with PMBus digital interface and adaptive voltage scaling capability for non-isolated point-of-load designs. Together with the National system power protection and management products, TI provides the design engineer with complete single-, dual- and multi-rail, multi-phase PMBus solutions - allowing telecom and server designers to intelligently monitor, protect and manage the state of health of their power systems. Read more

September 29, 2011 Alpha and Omega Semiconductor Limited (AOS) has released the AOZ1050 and AOZ1051 high efficiency, simple-to-use synchronous buck regulators. Both AOZ1050 and AOZ1051 are available in a thermally enhanced exposed pad SO-8 package, delivering output current of 2 A and 3 A, respectively. Read more

September 16, 2011 Texas Instruments Incorporated hass introduced a synchronous 30-A step-down regulator with integrated MOSFETs that achieves 90-percent power efficiency and fast transient response in a small 5-mm x 6-mm PowerStack QFN package. Read more

September 8, 2011 Diodes Incorporated has introduced a pair of highly integrated synchronous DC/DC buck converters. The AP6502 and AP6503 are designed for use in consumer electronics systems such as digital TVs, LCD monitors and set-top boxes, which require ultra-efficient voltage conversion.   Read more

September 5, 2011 Infineon has introduced a family of single P-channel 40V automotive power MOSFETs produced using advanced trench technology. The new 40V OptiMOS P2 products aim power management applications for next-generation cars and offer improved energy efficiency, reduced CO2 emissions and cost savings. Read more

August 10, 2011 Texas Instruments Incorporated has introduced a synchronous 50-mA, 60-V SWIFT step-down regulator with high efficiency and low noise performance in a solution size of only 125 mm2. The TPS54062 integrates both the high-side and low-side power MOSFETs, providing efficient power conversion and transient protection to noise-sensitive industrial automation and sensor control, smart meter, telecom, computing and consumer designs. Read more

August 9, 2011 Toshiba Electronics Europe (TEE) has extended the company’s family of 30 V power MOSFETs with new devices that combine high-speed switching, high current ratings and compact package size. The latest devices in the TPCx family are ideal for a wide variety of digital home appliances, office equipment and other products that require synchronous rectification DC/DC conversion. Read more

August 4, 2011 Linear Technology has introduced a synchronous buck-boost converter that delivers up to 1 A of output current from a Li-Ion/Polymer source or 300 mA from dual cell alkaline/NiCd/NiMH sources. The LTC3536’s 1.8 V to 5.5 V input and output voltage range achieves a +/-1% accurate output with inputs above, below or equal to the regulated output. Read more

July 19, 2011 austriamicrosystems has introduced two new LED driver ICs with optimized performance and features to perfectly meet the needs of the latest LCD TVs.  The new drivers are the first in a family of 3rd generation drivers that minimize energy consumption while optimizing picture quality. Read more

July 19, 2011 Renesas Electronics has developed 100 A power MOSFETs for motor drive in consumer products, such as cordless power tools and power-assisted bicycles, to strengthen the company’s entire line of power semiconductor devices. The new power MOSFETs cover a wide range of voltages, with three new products, including the N0413N, having a voltage tolerance of 40 V and three others, including the N0601N, having a voltage tolerance of 60 V. The new power MOSFETs have loss levels among the lowest in the industry, making them ideal for extending battery life. Read more

July 14, 2011 International Rectifier is enhancing the company’s PQFN offering with the introduction of a PQFN 2 mm x 2 mm and PQFN 3.3 mm x3.3 mm package. The new packages integrate two HEXFET MOSFETs utilizing IR’s latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. Read more

July 14, 2011 Linear Technology Corporation has introduced the H- and MP- grade versions of the company’s LTC3851A, a wide input voltage range (4 V to 38 V) synchronous step-down DC/DC controller that encompasses a broad range of applications, including most intermediate bus voltages and battery chemistries. The onboard MOSFET gate drivers enable the use of high power external MOSFETs to produce output currents up to 25 A with output voltages ranging from 0.8 V to 5.5 V, ideal for point-of-load requirements. Read more

July 7, 2011 International Rectifier has unveiled a family of automotive qualified MOSFETs for a range of applications requiring low on-state resistance (RDS(on)) including heavy load applications used in traditional  Internal Combustion Engine (ICE) platforms, micro and hybrid vehicle platforms.  The new rugged planar devices feature low RDS(on) and are  available across a range of voltages from 40V to 75 V in a variety of SMD and through-hole packages. Read more

June 22, 2011 iWatt, Inc., has expanded the company’s family of DC/DC LED backlight drivers with its iW7032 which can power up to 32 parallel strings of LEDs. Like the iW7040, which powers up to 64 parallel strings of LEDs, the iW7032 is a mixed-signal IC that features iWatt’s digital adaptive switching technology with integrated MOSFETs. Read more

June 20, 2011 National Semiconductor Corp. has introduced what the company claims is the industry’s first 100 V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver designs. Read more

May 31, 2011 ROHM Semiconductor has expanded the company’s lineup of high speed switching, high voltage resistance MOSFETs for PFC circuits in switching power supplies and main switch circuits. A variety of package types are available in both, surface mount (i.e. CPT/D-PAK, LPT/D2-PAK) and through-hole (e.g. TO-3PF) configurations. Read more

May 26, 2011 Toshiba Electronics Europe (TEE) has added a new n-channel device to its family of low voltage MOSFETs - which is a member of the company's continuously expanding SSM series of small signal MOSFETs – has low loss characteristics that make it ideal for power management in a variety of portable, battery-powered applications. Read more

May 17, 2011 Toshiba Electronics Europe (TEE) has launched an ultra-compact, high-speed, high-current gate drive photo-IC, that can directly drive middle capacity IGBTs or power MOSFETs in an extended operating temperature range of -40 to 125 degrees C. Read more

May 17, 2011 International Rectifier has introduced a family of automotive qualified MOSFETs housed in a novel WideLead TO-262 package that reduces lead resistance by 50 percent compared to traditional TO-262 packages while offering 30 percent higher current. Read more

May 10, 2011 Diodes Incorporated has introduced a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package. Occupying 0.6 mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and, with a junction to ambient thermal resistance (Rthj-a) of 256 degrees C/W, supports a power dissipation of up to 1.3 W under continuous conditions, double that of comparable alternatives. Read more

May 9, 2011 Vishay Intertechnology, Inc., has unveiled an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile, thermally enhanced PowerPAK MLP 6x6 40-pin package. Read more

May 3, 2011 Intersil Corporation has introduced the industry's most compact and efficient 6A synchronous buck (step-down) regulator. The new regulator features efficiency up to 97% and switching frequency up to 4MHz. Read more

May 2, 2011 Linear Technology Corporation has introduced an isolated 12-port Power Source Equipment (PSE) controller chipset designed for use in IEEE 802.3at (PoE+) Type 1 and Type 2 compliant Power over Ethernet (PoE) systems.  The LTC4270/71 provides 12 independent PSE channels for simpler, lower component count designs, reduced board space and lower solution costs.  Read more

April 21, 2011 International Rectifier has introduced the IRS2052M 2-Channel Class D Audio IC for high performance home theater systems and car audio amplifiers. Read more

April 8, 2011 International Rectifier has introduced a family of rugged automotive qualified MOSFETs for a range of applications used in Internal Combustion Engine (ICE) and hybrid vehicle platforms. Read more

April 6, 2011 Linear Technology Corporation has introduced the H-grade version of the LTC3872, a small footprint 550 kHz fixed frequency step-up DC/DC controller that is specified over a -40 to150°C junction temperature range. The LTC3872 accepts a 2.5 V to 9.8 V input voltage range and can produce an output voltage as high as 60 V without needing a sense resistor. Read more

March 31, 2011 Vishay Intertechnology, Inc., has introduced a new 40 V and 60 V n-channel TrenchFET power MOSFETs with the industry’s lowest on-resistance and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK SO-8 packages. Read more

March 30, 2011 Diodes has introduced the first MOSFETs in a new range of space-saving DFN3020 packaged discrete products. Three dual MOSFET combinations have been released, comprising 20 V and 30 V N-channel and 30 V complementary devices. Read more

March 29, 2011 International Rectifier has introduced the company’s first family of radiation hardened (RAD-Hard) dual power MOSFETs in a compact hermetic LCC-6 surface mount package for low power lightweight space applications requiring a small footprint such as satellite payload power systems. Read more

March 15, 2011 Efficient Power Conversion Corporation has unveiled two lead-free RoHS-compliant enhancement-mode gallium nitride on silicon (eGaN) FETs. Read more

March 15, 2011 Linear Technology Corporation has introduced a compact, dual ideal diode with Hot Swap controller that provides PowerPath and inrush current control for redundant supplies operating from 2.9 V to 18 V. The LTC4227 regulates the forward voltage drop across two external N-channel MOSFETs to ensure smooth current transfer between supplies in diode-OR applications. Read more

March 9, 2011 Microsemi Corporation has unveiled the company's new solar technology portfolio which include products for renewable energy applications include SmartFusion and IGLOO FPGAs; analog, mixed signal devices such as bypass diodes/switches, MOSFETs, FREDs and IGBTs; DC-DC converters, and pulse width modulation (PWM) modules. Read more

March 7, 2011 At APEC 2011, Infineon Technologies has revealed that medium voltage power MOSFETs, OptiMOS, are now available in the CanPAK package which uses DirectFET technology licensed from International Rectifier Corporation. The new devices can be used in a wide range of industrial applications like DC-DC converters, solar micro inverters, Maximum Power Point Trackers (MPPT) in solar energy systems, low voltage drives and synchronous rectification for servers. Read more

February 24, 2011 Vishay Intertechnology, Inc., has released two new 100 V n-channel TrenchFET power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK SO-8 packages. Utilizing Vishay's new ThunderFET technology, the SiR870DP and Si4190DY  claim to offer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. Read more

February 18, 2011 Linear Technology Corporation has introduced the H-grade version of the LTC4444/-5, a high-speed, high input supply voltage (100 V), synchronous MOSFET gate driver designed to drive upper and lower power N-channel MOSFETs in synchronous rectified converter topologies. Read more

February 9, 2011 Maxim Integrated Products has introduced a current-mode, synchronous DC-DC converter in a 1.65 mm x 1.65 mm wafer-level package (WLP). The miniature step-down regulator integrates MOSFETs to simplify design, minimize EMI, and save board space while achieving conversion efficiency up to 96% at full load (2 A). Read more

February 8, 2011 Maxim Integrated Products has introduced the MAX17435/MAX17535 SMBus battery chargers capable of operating at 850 kHz and 500 kHz, respectively. The SMBus interface enables programming of the charge settings without changing external components and maximizes design flexibility. Read more

February 1, 2011 International Rectifier has introduced a family of DirectFETplus power MOSFETs featuring IR’s new generation of silicon that sets a new standard in efficiency for 12 V input synchronous buck applications including next-generation servers, desktops, and notebooks. Read more

January 27, 2011 International Rectifier has introduced a family of automotive qualified planar MOSFETs for a variety of applications used in Internal Combustion Engine (ICE), hybrid and full electric vehicle platforms. Read more

January 18, 2011 Renesas Electronics has introduced 32 new N-channel power MOSFETs with voltage tolerances of 40 and 55 V. The new power MOSFETs include the NP75N04YUK device, featuring a compact HSON package with one-half the mounting area of the existing TO-252 package and the ability to handle current flows of up to 75 A. Read more

January 13, 2011 Maxim Integrated Products has introduced a low-voltage (2.4 V to 3.6 V), synchronous switching regulator in a 2 mm x 2 mm wafer-level package (WLP). The miniature step-down regulator integrates MOSFETs to simplify design, minimize EMI, improve reliability, and save board space. The MAX15040 operates from a fixed 1 MHz switching frequency to further reduce total solution size, as it allows all-ceramic-capacitor designs. Read more

December 20, 2010 Diodes Incorporated is making further additions to its IntelliFET range of self protected MOSFETs. The 60 V, 75 mΩ (typical) rated single N-channel ZXMS6006DG/SG and dual N-channel ZXMS6006DT8 provide thermal shutdown, short circuit, over voltage, over current and input ESD protection facilities enabling circuit designers to dramatically increase circuit reliability. Read more

December 8, 2010 Semtech Corp., has expanded its point-of-load (POL) regulator platform to include a highly-integrated, 4A output current, synchronous buck regulator with programmable soft-start in a tiny 3 x 3 x 0.6 mm package. The new SC185 joins Semtech's existing platform of POL regulators, which includes a wide selection of output currents ranging from 0.5 A to 4 A. Read more

December 2, 2010 Maxim Integrated Products has introduced the MAX15050/MAX15051, low-voltage (2.9 V to 5.5 V), 4 A, synchronous DC-DC regulators in a 2 mm x 2 mm wafer-level package (WLP). The step-down regulators integrate MOSFETs to simplify design, minimize EMI, and save board space. Read more

December 2, 2010 International Rectifier has introduced a family of hermetic radiation hardened (RAD-Hard) 100 V MOSFETs in a new compact, surface mount SMD0.2 package for space applications such as satellite bus power systems and payload power supplies. Read more

November 29, 2010 Linear Technology Corporation introduces the LTM4628, µModule regulator containing two step-down 8 A DC/DC converter circuits with the inductors, MOSFETs and other necessary components in a 15mm x 15 mm x 4.32 mm LGA package. The low thermal impedance of the LGA package and high operating efficiency enable full output power DC/DC conversion from 12 VIN to 1 VOUT at 70 degrees C ambient with no air flow, or 86 degrees C ambient with 200 linear feet per minute. Read more

November 18, 2010 International Rectifier has introduced the IRS2053M 200 V driver IC for use in Class D Audio applications including high performance home theater systems and car audio amplifiers requiring a compact footprint. Read more

November 17, 2010 Fairchild Semiconductor has developed the FOD3184 , which is a 3 A output current, high speed MOSFET/IGBT gate driver optocoupler with a nearly 50% reduction in propagation delay times and 13% lower power consumption compared to the popular FOD3120 gate driver. The new device is ideal for high frequency driving of power MOSFETs and IGBTs at frequencies up to 250 kHz. Read more

November 17, 2010 CISSOID has unveiled THEMIS and ATLAS, the company’s power transistor driver chipset meant for high efficiency motor drives and power converters. THEMIS and ATLAS are especially designed to drive seamlessly the most advanced power switches, including Silicon Carbide (SiC) MOSFETs and JFETs as well as Silicon IGBTs and MOSFETs. Read more

November 11, 2010 Fairchild Semiconductor has developed the AccuPower load switch series, which claims to be the industry’s first 2.8 V to 36 V integrated load switches, intended to address the designer’s mid-voltage needs to provide power load switching and advanced protection, while also saving board space and lowering overall costs. Read more

November 9, 2010 Power Integrations has launched HiperPFS, a family of power factor correction (PFC) controllers with integrated high-voltage power MOSFETs. HiperPFS devices apply an innovative control scheme that optimizes efficiency at light load levels. Read more

November 9, 2010 Intersil Corporation has introduced a version of the company’s ISL8200M DC/DC power module designed for defense, harsh environment and avionics applications. Read more

November 8, 2010 At Electronica in Munich, Germany, ON Semiconductor (Hall A5, Stand 225) is introducing four new devices designed to support portable and consumer electronics applications. Read more

November 1, 2010 Linear Technology Corporation unveils a low/wide input voltage (2.7 V to 5.5 V or 4 V-38 V) synchronous step-down DC/DC controller. The device's onboard charge pump provides 5 V bias to drive low RDS(ON) and standard logic-level power MOSFETs from a 3.3 V nominal supply. Read more

October 25, 2010 To meet the needs for high current capability, high efficiency and smaller form factors, Fairchild Semiconductor has developed the Dual Cool packaging for MOSFETs. The Dual Cool package is a top-side cooling PQFN device that incorporates new packaging technology which enables additional power dissipation through the top of the package. Read more

October 25, 2010 Vishay Intertechnology, Inc., has released two new devices in the company’s family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical applications. Read more

October 14, 2010 Vishay Intertechnology, Inc., has released four new 500-V, 16-A n-channel power MOSFETs with ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 68 nC, in the TO-220AB, TO-220 FULLPAK, D²PAK, and TO-247AC packages. Read more

September 28, 2010 Linear Technology Corporation has unveiled a high power two phase single output synchronous step-up DC/DC controller that replaces the boost diodes with high efficiency N-channel MOSFETs. The LTC3787 eliminates the heat sink normally required in medium to high power boost converters. Read more

September 27, 2010 Three new power MOSFETs, the RJK0210DPA, RJK0211DPA and RJK0212DPA from Renesas Electronics, are now available in sample quantities from MSC. Read more

September 22, 2010 Intersil Corporation has introduced an efficient, dual channel step-down regulator that reduces component count and optimizes design flexibility for high power-density industrial, communications and consumer electronics applications. Read more

September 22, 2010 Linear Technology Corporation has introduced a buck-boost DC/DC uModule system-in-a-package that is guaranteed and tested for the wide -55 to 125 degrees C temperature range. Read more

September 17, 2010 Renesas Electronics has developed two power semiconductor devices with ultra-compact packages for use in DC/DC converters that provide power to the MCU/CPU, memory, and other circuit blocks of products such as servers and notebook PCs. Read more

September 17, 2010 Linear Technology Corporation has introduced a 15A DC/DC uModule regulator with onboard inductors, MOSFETs and supporting components in a 2.6g, 15 mm x 15 mm LGA (land grid array) package. Read more

September 6, 2010 International Rectifier has launched two automotive DirectFET2 power MOSFETs optimized with low gate charge for switching applications including Switch Mode Power Supplies (SMPS), Class D Audio systems, High Intensity Discharge (HID) lighting, and other automotive power conversion applications. Read more

September 6, 2010 MSC is expanding its product portfolio with seven new N-channel and P channel power MOSFETs in space-saving 8-pin HSON packages. Read more

August 23, 2010 International Rectifier has introduced a family of automotive DirectFET2 power MOSFETs for high frequency switching applications including the output stage for Class D Audio systems. Read more

August 18, 2010 IXYS Corporation and Clare, Inc., a wholly owned subsidiary of IXYS, announces the immediate availability of the IXD_609 family, the latest in the 600 series of high current, ultrafast low side gate driver ICs. Read more

August 10, 2010 Central Semiconductor Corp., has unveiled the CEDM7001 (N-Channel) and complementary CEDM8001 (P-Channel) 20 V, 100 mA MOSFETs packaged in the ultra miniature, low profile SOT-883L surface mount case. Read more

August 9, 2010 Intersil Corporation had added to its growing family of compact, fully integrated battery chargers by introducing a new device which is based on a true switched-mode topology that claims to ensure the highest operating efficiency and lowest power dissipation for 1-cell and 2-cell Li-ion and Li-polymer based portable applications such as smartphones and tablet computers. Read more

July 22, 2010 Linear Technology Corporation has introduced a 6 A DC/DC µModule regulator, which includes the inductor, MOSFETs, DC/DC regulator, input and output bypass capacitors and supporting circuitry in a 2.3g, 9mm x 15mm x 4.32mm LGA package. Read more

July 12, 2010 Vishay Intertechnology, Inc. has released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-ohm maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages. Read more

July 6, 2010 IXYS Corporation and Clare, Inc., a wholly owned subsidiary of IXYS, has introduced the IXD_604 family of 4 A dual-channel low-side gate driver ICs, which is the first of a series of high current, low side gate driver ICs to be offered by Clare, that is well suited for driving IXYS' power MOSFETs and IGBTs. Read more

July 5, 2010 Critically short supply of some analog, logic, memory and power management ICs is resulting in rising prices and delivery delays of "worrying lengths," according to market research firm iSuppli Corp. Read more

July 1, 2010 ROHM Semiconductor claims to have introduced the first MOSFETs capable of drive operation from 0.9 V. Based on the company's advanced fabrication technology the ECOMOS devices exhibit an improvement in RDS(ON) values particularly when low gate voltages are required. Read more

June 29, 2010 Optimized for use in the harshest electrical environments, dual self-protected low side MOSFETs from Diodes Incorporated provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability.  Read more

June 25, 2010 International Rectifier has expanded its portfolio of HEXFET power MOSFETs to offer a complete family of mid-voltage devices available in a 5x6 mm PQFN package with optimized copper clip and solder die. Read more

June 24, 2010 Infineon Technologies is launching a new 650V CoolMOS C6/E6 series of high-performance power MOSFETs, combining the benefits of modern superjunction (SJ) devices such as low on-resistance and reduced capacitive switching losses with easy control of switching behaviour as well as high body diode ruggedness. Read more

June 1, 2010 Lattice Semiconductor Corporation has added a new, higher performance device to its second generation Power Manager II product family. Read more

May 18, 2010 Maxim Integrated Products has introduced low-cost, three-output, synchronous step-down controllers with tracking (MAX15048) or sequencing (MAX15049) options designed to meet the tight tolerances of small-geometry logic devices. Read more

May 13, 2010 Linear Technology Corporation has introduced a three-phase single output high efficiency (up to 95 percent) synchronous step-down DC/DC controller with PolyPhase operation, differential output voltage sensing and integrated phased-lock loop (PLL) clock synchronization. Read more

May 5, 2010 Toshiba Electronics Europe (TEE) has expanded its family of power MOSFETs by introducing new surface mount devices with voltage ratings up to 600 V. Read more

April 22, 2010 Central Semiconductor Corp. has released dual complementary N and P-Channel MOSFETs that feature  a 20 V, 160 mA N-Channel and a 20 V, 140 mA P-Channel MOSFET packaged in the ultra miniature SOT-963 surface mount case. Read more

April 22, 2010 Infineon Technologies and Fairchild Semiconductor entered a packaging partnership for their power MOSFETs in the Infineon PowerStage 3x3 or Fairchild MLP 3x3 (Power33) packages. The compatibility agreement is in response to the need for supply security while balancing the drive towards best-in-class efficiency and thermal performance in DC-DC conversion. Read more

April 19, 2010 NXP Semiconductors claims to be the first supplier to launch a full range of automotive power MOSFETs housed in the compact, thermally enhanced Loss Free PAcKage (LFPAK). Read more

April 15, 2010 IXYS Corporation, a leader in power semiconductors for power conversion and motion control applications, is introducing five instruments as part of its PCX-9000 Series available from its Colorado division. Read more

March 22, 2010 Linear Technology has unveiled a synchronous step-down DC/DC converter designed to accurately (±6 percent) regulate output currents up to 20-A. Read more

March 19, 2010 Vishay Intertechnology, Inc. has unveiled a new device in the microBUCK family of integrated synchronous buck regulators. Read more

March 16, 2010 High temperature semiconductor solutions provider, Cissoid, has released PROMETHEUS-II, a fast high temperature power transistor driver reference design suitable for operation from -55 up to +225 degrees C. Read more

March 11, 2010 Fairchild Semiconductor's N-Channel MOSFETs, the FDZ192NZ and FDZ372NZ, are space-saving component solutions that offer design engineers for portable device applications lower RDS(ON) ratings, which increases efficiency and extends battery life, through the use of advanced PowerTrench process technology. Read more