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New 1200 Field Stop IGBTs support high power inductive heating and inverter applications

May 08, 2012 | Paul Buckley | 222904557
ON Semiconductor has introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products.
The NGTB15N120, NGTB20N120 and NGTB25N120 enable high performance power conversion solutions for a wide range of demanding applications, including induction cook tops, rice cookers and other small kitchen appliances.
 
Increasing energy prices and environmental concerns around carbon emissions are continuously driving demand for higher performance power discrete components; especially in high power inductive and inverter applications. These new 1200 V rated IGBTs utilize deep trench technology and state-of-the-art wafer thinning and processing techniques to enable very low turn-off losses while maintaining a low ‘ON’ state voltage during turn-on, which results in lower switching and conduction losses.

The devices are offered with a choice of 15 A, 20 A and 25 A current ratings and are co-packaged with a low forward drop and soft-recovery fast rectifier to meet stringent customer requirements for high efficiency while providing a space efficient complete solution.
 
Packaging and Pricing

The TO-247 packaged Field Stop IGBT devices save board space and are optimised for low on-state voltage drop and turn-off switching losses. The NGTB15N120IHLWG, NGTB20N120IHLWG, and NGTB25N120IHLWG inductive heating specific IGBTs are priced at $1.50, $1.80, and $2.00 per unit respectively, all in quantities of 2,500.  The NGTB15N120LWG, NGTB20N120LWG, and NGTB25N120LWG motor drive specific IGBTs are priced at $1.75, $2.10, and $2.35 respectively, all in quantities of 2,500.
 
Visit ON Semiconductor at www.onsemi.com










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