New Products
NXP unveils new plastic packages for RF power transistors
June 06, 2011 | Paul Buckley | 222902782
NXP Semiconductors N.V. has launched a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices have been introduced as a complement to NXP’s extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.
NXP’s OMP roadmap covers all the high-volume frequency ranges and applications: 10 – 500-MHz ISM, 470 860-MHz broadcast, 700 – 2200-MHz GSM, WCDMA telecom, 2300 – 2700-MHz LTE telecom, 2.45 GHz ISM, and even products for the 2700 – 3500-MHz S-band. Product types will extend to all existing categories: discrete pre-drivers (2.5 – 10 W), drivers (20 – 45 W), MMICs (20 – 60 W), finals (50 - 200 W) and integrated Doherty devices (50 – 110 W).
Availability
OMP products up to 10 W will utilize NXP’s existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.
More information about the NXP RF Manual at
http://www.nxp.com/documents/selection_guide/75017087.pdf
Availability
OMP products up to 10 W will utilize NXP’s existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.
More information about the NXP RF Manual at
http://www.nxp.com/documents/selection_guide/75017087.pdf
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