NXP Semiconductors has unveiled the world's first n-channel sub 1 milliOhm 25 V MOSFET, PSMN1R2-25YL, and is claiming the lowest ever RDSon and best in class Figure of Merit.

The company says the device is the lowest ever RDSon MOSFET in a Power-SO8 package (Loss Free package: LFPAK) and is an extension to NXP's existing MOSFET portfolio. The newest generation MOSFET combines the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon and offers numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators.

John David Hughes, Senior International Product Marketing Manager of NXP, said: "We are using innovative techniques in the new Trench 6 process which further reduce the on-resistance. There are many advantages of the new Trench technology to our customers such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package. NXP's Power-S08 (LFPAK) package is compatible with all widely accepted Power SO-8 PCB footprints."

NXP's Trench 6 MOSFETs, PSMN1R2-25YL, has a typical RDSon of 0.9 mOhm for a 25 V part in Power-S08 (LFPAK), and 1.0 mOhm (typical) for a 30 V part.

In addition to launch of the world's lowest RDSon MOSFET, NXP has announced a new portfolio of products aimed at power supply, motion control, and industrial markets. The range includes products with operating voltages of 25, 30, 40 and 80 V, packaged in Power-S08 (LFPAK) and TO220.

Availability

PSMN1R2"25YL is now available at $0.80 (for 1000 pieces).

Datasheet for: NXP's Trench 6 MOSFETs