December 1, 2011 Toshiba Electronics Europe (TEE) has launched its next generation of medium power MOSFETs for power management applications in mobile devices. The ultra-compact SSM3J13xTU MOSFETs meet the low-power, high-speed, high-current switching requirements of power peripheral circuits in applications such as mobile phones, digital cameras and other battery operated equipment. Read more

November 15, 2011 Enpirion has added a new member to the company’s power IC portfolio targeted at embedded computing as well as solid-state drives (SSDs). The Enpirion EN5339 3 Amp power system-on-a-chip (PowerSoC) integrates the controller, power MOSFETs, compensation network and inductor into one highly compact solution that significantly reduces the traditional engineering analysis and design effort associated with discrete DC-DC converter designs. Read more

November 15, 2011 Vishay Intertechnology, Inc., is expanding its PowerPAIR family of dual asymmetric power MOSFETs for low-voltage DC/DC converter applications with new devices that expand the series' voltage and package footprint options. The new devices make Vishay the only supplier to offer 3 mm by 3 mm, 6 mm by 3.7 mm, and 6 mm by 5 mm PowerPAIR form factors. Read more

November 10, 2011 Alpha and Omega Semiconductor Limited (AOS) claims to be setting new standards in power density and energy efficiency for power MOSFETs in an ultra-thin (0.8 mm) DFN 3x3 package. The devices are implemented on AOS' proprietary AlphaMOS technology. Read more

October 4, 2011 Texas Instruments Incorporated has introduced two 20-V step-down voltage regulators with PMBus digital interface and adaptive voltage scaling capability for non-isolated point-of-load designs. Together with the National system power protection and management products, TI provides the design engineer with complete single-, dual- and multi-rail, multi-phase PMBus solutions - allowing telecom and server designers to intelligently monitor, protect and manage the state of health of their power systems. Read more

September 29, 2011 Alpha and Omega Semiconductor Limited (AOS) has released the AOZ1050 and AOZ1051 high efficiency, simple-to-use synchronous buck regulators. Both AOZ1050 and AOZ1051 are available in a thermally enhanced exposed pad SO-8 package, delivering output current of 2 A and 3 A, respectively. Read more

September 8, 2011 Diodes Incorporated has introduced a pair of highly integrated synchronous DC/DC buck converters. The AP6502 and AP6503 are designed for use in consumer electronics systems such as digital TVs, LCD monitors and set-top boxes, which require ultra-efficient voltage conversion.   Read more

September 5, 2011 Infineon has introduced a family of single P-channel 40V automotive power MOSFETs produced using advanced trench technology. The new 40V OptiMOS P2 products aim power management applications for next-generation cars and offer improved energy efficiency, reduced CO2 emissions and cost savings. Read more

July 19, 2011 austriamicrosystems has introduced two new LED driver ICs with optimized performance and features to perfectly meet the needs of the latest LCD TVs.  The new drivers are the first in a family of 3rd generation drivers that minimize energy consumption while optimizing picture quality. Read more

July 19, 2011 Renesas Electronics has developed 100 A power MOSFETs for motor drive in consumer products, such as cordless power tools and power-assisted bicycles, to strengthen the company’s entire line of power semiconductor devices. The new power MOSFETs cover a wide range of voltages, with three new products, including the N0413N, having a voltage tolerance of 40 V and three others, including the N0601N, having a voltage tolerance of 60 V. The new power MOSFETs have loss levels among the lowest in the industry, making them ideal for extending battery life. Read more

May 17, 2011 Toshiba Electronics Europe (TEE) has launched an ultra-compact, high-speed, high-current gate drive photo-IC, that can directly drive middle capacity IGBTs or power MOSFETs in an extended operating temperature range of -40 to 125 degrees C. Read more

March 31, 2011 Vishay Intertechnology, Inc., has introduced a new 40 V and 60 V n-channel TrenchFET power MOSFETs with the industry’s lowest on-resistance and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK SO-8 packages. Read more

March 29, 2011 International Rectifier has introduced the company’s first family of radiation hardened (RAD-Hard) dual power MOSFETs in a compact hermetic LCC-6 surface mount package for low power lightweight space applications requiring a small footprint such as satellite payload power systems. Read more

March 15, 2011 Efficient Power Conversion Corporation has unveiled two lead-free RoHS-compliant enhancement-mode gallium nitride on silicon (eGaN) FETs. Read more

March 7, 2011 At APEC 2011, Infineon Technologies has revealed that medium voltage power MOSFETs, OptiMOS, are now available in the CanPAK package which uses DirectFET technology licensed from International Rectifier Corporation. The new devices can be used in a wide range of industrial applications like DC-DC converters, solar micro inverters, Maximum Power Point Trackers (MPPT) in solar energy systems, low voltage drives and synchronous rectification for servers. Read more

February 24, 2011 Vishay Intertechnology, Inc., has released two new 100 V n-channel TrenchFET power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK SO-8 packages. Utilizing Vishay's new ThunderFET technology, the SiR870DP and Si4190DY  claim to offer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. Read more

February 1, 2011 International Rectifier has introduced a family of DirectFETplus power MOSFETs featuring IR’s new generation of silicon that sets a new standard in efficiency for 12 V input synchronous buck applications including next-generation servers, desktops, and notebooks. Read more

January 18, 2011 Renesas Electronics has introduced 32 new N-channel power MOSFETs with voltage tolerances of 40 and 55 V. The new power MOSFETs include the NP75N04YUK device, featuring a compact HSON package with one-half the mounting area of the existing TO-252 package and the ability to handle current flows of up to 75 A. Read more

December 8, 2010 Semtech Corp., has expanded its point-of-load (POL) regulator platform to include a highly-integrated, 4A output current, synchronous buck regulator with programmable soft-start in a tiny 3 x 3 x 0.6 mm package. The new SC185 joins Semtech's existing platform of POL regulators, which includes a wide selection of output currents ranging from 0.5 A to 4 A. Read more

November 17, 2010 Fairchild Semiconductor has developed the FOD3184 , which is a 3 A output current, high speed MOSFET/IGBT gate driver optocoupler with a nearly 50% reduction in propagation delay times and 13% lower power consumption compared to the popular FOD3120 gate driver. The new device is ideal for high frequency driving of power MOSFETs and IGBTs at frequencies up to 250 kHz. Read more

November 9, 2010 Power Integrations has launched HiperPFS, a family of power factor correction (PFC) controllers with integrated high-voltage power MOSFETs. HiperPFS devices apply an innovative control scheme that optimizes efficiency at light load levels. Read more

November 9, 2010 Intersil Corporation has introduced a version of the company’s ISL8200M DC/DC power module designed for defense, harsh environment and avionics applications. Read more

November 1, 2010 Linear Technology Corporation unveils a low/wide input voltage (2.7 V to 5.5 V or 4 V-38 V) synchronous step-down DC/DC controller. The device's onboard charge pump provides 5 V bias to drive low RDS(ON) and standard logic-level power MOSFETs from a 3.3 V nominal supply. Read more

October 25, 2010 Vishay Intertechnology, Inc., has released two new devices in the company’s family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical applications. Read more

October 14, 2010 Vishay Intertechnology, Inc., has released four new 500-V, 16-A n-channel power MOSFETs with ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 68 nC, in the TO-220AB, TO-220 FULLPAK, D²PAK, and TO-247AC packages. Read more

September 27, 2010 Three new power MOSFETs, the RJK0210DPA, RJK0211DPA and RJK0212DPA from Renesas Electronics, are now available in sample quantities from MSC. Read more

September 6, 2010 International Rectifier has launched two automotive DirectFET2 power MOSFETs optimized with low gate charge for switching applications including Switch Mode Power Supplies (SMPS), Class D Audio systems, High Intensity Discharge (HID) lighting, and other automotive power conversion applications. Read more

September 6, 2010 MSC is expanding its product portfolio with seven new N-channel and P channel power MOSFETs in space-saving 8-pin HSON packages. Read more

August 23, 2010 International Rectifier has introduced a family of automotive DirectFET2 power MOSFETs for high frequency switching applications including the output stage for Class D Audio systems. Read more

August 18, 2010 IXYS Corporation and Clare, Inc., a wholly owned subsidiary of IXYS, announces the immediate availability of the IXD_609 family, the latest in the 600 series of high current, ultrafast low side gate driver ICs. Read more

July 12, 2010 Vishay Intertechnology, Inc. has released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-ohm maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages. Read more

July 6, 2010 IXYS Corporation and Clare, Inc., a wholly owned subsidiary of IXYS, has introduced the IXD_604 family of 4 A dual-channel low-side gate driver ICs, which is the first of a series of high current, low side gate driver ICs to be offered by Clare, that is well suited for driving IXYS' power MOSFETs and IGBTs. Read more

June 25, 2010 International Rectifier has expanded its portfolio of HEXFET power MOSFETs to offer a complete family of mid-voltage devices available in a 5x6 mm PQFN package with optimized copper clip and solder die. Read more

June 24, 2010 Infineon Technologies is launching a new 650V CoolMOS C6/E6 series of high-performance power MOSFETs, combining the benefits of modern superjunction (SJ) devices such as low on-resistance and reduced capacitive switching losses with easy control of switching behaviour as well as high body diode ruggedness. Read more

May 5, 2010 Toshiba Electronics Europe (TEE) has expanded its family of power MOSFETs by introducing new surface mount devices with voltage ratings up to 600 V. Read more

April 22, 2010 Infineon Technologies and Fairchild Semiconductor entered a packaging partnership for their power MOSFETs in the Infineon PowerStage 3x3 or Fairchild MLP 3x3 (Power33) packages. The compatibility agreement is in response to the need for supply security while balancing the drive towards best-in-class efficiency and thermal performance in DC-DC conversion. Read more

April 19, 2010 NXP Semiconductors claims to be the first supplier to launch a full range of automotive power MOSFETs housed in the compact, thermally enhanced Loss Free PAcKage (LFPAK). Read more

April 15, 2010 IXYS Corporation, a leader in power semiconductors for power conversion and motion control applications, is introducing five instruments as part of its PCX-9000 Series available from its Colorado division. Read more