With the introduction of the new model 0405SC-2200M device, the company supports next-generation UHF pulsed radar designs with a full series of SiC transistor options from 100 W, 500 W, 1,000 W, 1,500 W and now 2,200 W for both weather and long range over-the-horizon radar applications. .

According to Charles Leader, Microsemi RFIS Vice President, "This 2200-W device results from our long-term commitment to the military and aerospace markets, aggressively investing in SiC technology. In addition to supporting next-generation UHF designs, we're developing high pulsed power SiC transistors for both L-Band and S-Band radar systems. Our initial L-Band devices are scheduled for demonstration this fall."

The 0405SC-2200M transistor is a Generation 3 chip in its geometry, materials, processing and packaging. It is designed in a single-ended package for common gate 2200-W Class AB performance in the UHF frequencies from 406 MHz to 450 MHz. A hermetically sealed package built with 100 percent high temperature gold metallization and wires provides highest reliability and improved system yields. Its advanced SiC design provides state-of-the-art power in the industry's smallest transistor and circuit size for the specified frequency range.

Additional system benefits include simplified impedance matching, a high 125 V operating voltage that drastically reduces power supply size and dc current demand, low conducting current minimizing system noise, and the industry's highest peak power for reduced system power combining -- 4 way combination yields 8 kW with margin.

Key features include:

• Designed for 406-450 MHz UHF radar;
• Medium pulse 300 µs, 6% format;
• 2200 W output power;
• Typical power gain greater than 8 dB;
• Drain efficiency: 55% at 450 MHz;
• Typical compression: 1.0 dB;
• Vdd: +125V;
• Rugged VSWR-T 10:1 capability.

For further information: www.microsemi.com.