Superjunction power MOSFET integrates fast body diode, meets AEC-Q101
The solution combines the benefits of fast switching Superjunction MOSFETs: a better light load efficiency, reduced gate charge, lower switching losses, easy implementation as well as an outstanding reliability. Infineon offers a superior solution to the demand for higher energy efficiency of automotive applications: the new 650V CoolMOS CFDA provides lower area specific on-resistance while offering easy control of switching behavior as well as the highest body diode ruggedness in the market. Lower value of Q rr and Q oss at repetitive commutation on body diode reduces switching losses and turn on/off delay times. The new 650V CoolMOS CFDA complements Infineon's CoolMOS CFD product family and aims at applications that drive rapidly progressing electrification of cars.
Good controllability of rapid current and voltage transients and softer commutation behavior that results in reduced EMI (Electromagnetic Interference) appearance, gives the new series a clear advantage in comparison with competitor parts. Limited voltage overshoot during hard commutation of the body diode enables easier implementation of layout and design. CoolMOS CFDA provides 650V breakdown voltage, which means an increased safety margin compared to 600V.
Samples of IPW65R150CFDA (650V, 150mOhm R dson, TO247 package) are available, EUR 1.85 per piece (10k pieces quantity).
Further information on the new CFDA product family is available at www.infineon.com/cfda
- Infineon confirms dual-strand approach to GaN product portfolio
- Infineon dual-source Panasonic normally-off 600-V GaN power devices
- MOSFET family delivers lowest on-resistance and output capacitance
- Design-in for SiC: HV pulse generators use silicon carbide MOSFETs
- High-voltage resonant controller with PFC for LED drivers
- Infineon claims lowest FET resistance at 80V and 100V
- Silicon-Carbide MOSFET range extended at 1200V ratings
- 'New class' of 650V IGBTs cuts switching losses over 50 Hz to 20 kHz
- Power MOSFET drivers in smaller, thermally efficient packages
- MOSFET H-bridge reduces footprint by 50 percent
- Infineon Technologies completes International Rectifier acquisition
- UMC to manufacture automotive power devices for Infineon
- Infineon offers high-power module IP royalty-free, to spread adoption
- MOSFET gate drivers boost conversion efficiency
- 120A from a TO-247 package; Infineon’s TO-247PLUS for IGBTs
- Revealed - The real impact of battery bounce testing
- Bias power made easy
- Will energy-saving lightbulb become graphene's first commercial success?
- Polymer discovery paves way for low-cost ultrafast batteries
- How to get higher efficiency at lower loads: A new LLC platform makes it possible
- Has Google entered the battle for next-generation batteries?
- WPT breaks all connections, Part 3
- Quick-charging hybrid supercapacitor trumps thin-film lithium battery
- Real-time power GaN waveform monitoring
- Can fast-charging aluminum-ion battery dampen safety fears?
- Power grids - How many EVs can be charged simultaneoulsy?
- WPT breaks all connections, Part 2
- Will metal-free catalyst lower rechargeable zinc-air battery costs?
- Is UK Government cutting solar subsidies too soon?
- MIT pinpoints promising pathways for solar photovoltaic power
- Battery Management System Tutorial
- High Performance Portable DC Bench Power Supply: Save Money and Free Up Bench Real Estate by Building Your Own
- A Four-Quadrant DC/DC Switching Regulator Smoothly Transitions from Positive to Negative Output Voltages for FPGA and Other Applications
- Investigating Die attach Failure in IGBTs using Power Cycling Tests
- Power Systems Design eBook
- Wireless Power User Guide
- A Novel Approach to Industrial Rectifier Systems