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Thinnest wafer-level chip-scale N-Channel MOSFETs extend battery life

March 11, 2010 | Paul Buckley | 222900684
Fairchild Semiconductor's N-Channel MOSFETs, the FDZ192NZ and FDZ372NZ, are space-saving component solutions that offer design engineers for portable device applications lower RDS(ON) ratings, which increases efficiency and extends battery life, through the use of advanced PowerTrench process technology.

Fairchild's FDZ192NZ and FDZ372NZ claim to be the smallest and thinnest wafer-level chip-scale (WL-CSP) N-Channel devices in the industry. By using an advanced chip-scale packaging process, these devices provide space savings, critical for portable applications.

The company claims the WL-CSP MOSFETs represent a breakthrough in packaging technology, enabling devices to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge and low RDS(ON), with guaranteed RDS(ON) ratings with VGS as low as 1.5 V. These devices offer human body model (HBM) ESD protection levels greater than 2200 V.

The FDZ192NZ is housed in a 1.5 mm x 1.0 mm package with 0.65 mm thickness. The FDZ372NZ is housed in a 1.0 mm x 1.0 mm package with an industry leading 0.4 mm thickness. Compared to closest industry comparable devices, that are 1.6 mm x 1.6 mm in size, the FDZ192NZ is 41 percent smaller, while the FDZ372NZ is 61 percent smaller and 40 percent thinner.

The FDZ192NZ and FDZ372NZ are part of a comprehensive portfolio of advanced MOSFETs that answers the industry's need for compact, low-profile, high performance MOSFETs for charging, load switching, DC-DC and boost applications.

Availability and Pricing

Samples of FDZ192NZ and FDZ372NZ are available now with delivery in 12 weeks.   The FDZ192NZ is priced at 0.90 US Dollars for 1,000 pieces.  The FDZ372NZ is priced at 0.80 US Dollars for 1,000 pieces.

Datasheets:

FDZ192NZ

FDZ372NZ










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