Business News
TriQuint wins $12.3M GaN DARPA contract to develop ultra-fast power switch technology
May 02, 2012 | Jean-Pierre Joosting | 222904525
TriQuint Semiconductor has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.
TriQuint was selected by DARPA as the prime contractor for MPC Technical Area I, which seeks to develop a high-speed, DC-to-DC switch (modulator) and related process technology based on the company’s innovative enhancement-mode GaN transistors. This technology aims to improve the integration of power switches with advanced RF amplifiers to facilitate ultra-high efficiency, reduced-size amplifiers for radar and communications applications.
TriQuint has been a pioneer in GaN development and research since 1999. TriQuint currently leads multiple GaN process and manufacturing technology initiatives for DARPA including the Nitride Electronic NeXt-Generation Technology (NEXT) program as well as endeavors for the US Air Force, Army and Naval laboratories.
TriQuint is already exploring and bringing derivative devices to market made possible by milestones achieved in its many GaN programs. “The break-through performance demonstrated in ‘NEXT’ has helped us develop new devices, like our GaN power switches, that will open up additional radar and communications applications. We can substantially improve performance in these types of systems,” said TriQuint Vice President and General Manager for Defense Products and Foundry Services, James L. Klein. “This work is also leading to lower voltage GaN-based products. We see many exciting opportunities to develop more advanced RF amplifiers with integrated power switches.”
The enhancement mode power switching device for the MPC program will be designed to have a blocking voltage of 200 V, ultra-low dynamic on resistance of 1 ohm-mm and a slew rate of 500 V per nanosecond. These capabilities will provide state-of-the-art solid-state technology. RF amplifiers employing these switches will target 75% system efficiency at X-band (8-12 GHz).
TriQuint is teamed with Rockwell Collins, the University of Colorado at Boulder and Northrop Grumman—Technical Area II contractors—to create a new generation of RF power amplifiers that use contour modulation for very high efficiency performance that exceeds the capabilities of devices now available. Design approaches focusing on miniature system-in-a-package or monolithic integration to combine TriQuint’s switch / modulator with the power amplifier micro-system will be given preference.
www.triquint.com/defense
TriQuint has been a pioneer in GaN development and research since 1999. TriQuint currently leads multiple GaN process and manufacturing technology initiatives for DARPA including the Nitride Electronic NeXt-Generation Technology (NEXT) program as well as endeavors for the US Air Force, Army and Naval laboratories.
TriQuint is already exploring and bringing derivative devices to market made possible by milestones achieved in its many GaN programs. “The break-through performance demonstrated in ‘NEXT’ has helped us develop new devices, like our GaN power switches, that will open up additional radar and communications applications. We can substantially improve performance in these types of systems,” said TriQuint Vice President and General Manager for Defense Products and Foundry Services, James L. Klein. “This work is also leading to lower voltage GaN-based products. We see many exciting opportunities to develop more advanced RF amplifiers with integrated power switches.”
The enhancement mode power switching device for the MPC program will be designed to have a blocking voltage of 200 V, ultra-low dynamic on resistance of 1 ohm-mm and a slew rate of 500 V per nanosecond. These capabilities will provide state-of-the-art solid-state technology. RF amplifiers employing these switches will target 75% system efficiency at X-band (8-12 GHz).
TriQuint is teamed with Rockwell Collins, the University of Colorado at Boulder and Northrop Grumman—Technical Area II contractors—to create a new generation of RF power amplifiers that use contour modulation for very high efficiency performance that exceeds the capabilities of devices now available. Design approaches focusing on miniature system-in-a-package or monolithic integration to combine TriQuint’s switch / modulator with the power amplifier micro-system will be given preference.
www.triquint.com/defense
Please login to post your comment - click here
Related News
- Mouser sign global distribution agreement with Advanced Thermal Solutions
- Nujira surpasses own world record for ET PA linearity
- Silica moves to fast lane in Europe's LED market
- PCIe clock generators offer the smallest footprint and lowest power
- Low-power wireless projected to make waves in remote controls according to IMS Research
- 60-V integrated power modules extends power capability of low load-impedance Class D audio systems
- PFC IC enables compact designs for consumer products and PCs
- Radiation hardened DC-DC power conversion devices support space power systems
- 650-V n-channel power MOSFET series adds 23 new high power density devices
- LED power supply suits hand-held devices
MOST POPULAR NEWS
- Volvo evaluates flywheel hybrid drive - fuel savings of up to 25%
- PV storage market is set to grow to USD19bn by 2017
- Ultra-low-power SoC supports world's smallest Bluetooth location stickers
- Power-One enters into patent license agreement with Microchip
- Quad-MOSFET solution boosts efficiency and eliminates heat sinking in active bridge applications
- Solar industry capital spending hits seven-year low in 2013 but upturn is on the cards
- Market for GaN and SiC power semiconductors set to rise by factor of 18 in next decade
- Imec and Renesas collaborate on ultra-low power short range radios
- Advanced microcontroller combines floating point and low leakage technology to achieve longest battery lifetime in portable applications
- World's lowest power Bluetooth smart chip is unveiled
Interview
Technical papers
- Dangers of Aftermarket Counterfeit Battery Packs
- High Voltage Surge Stoppers Ensure Reliable Operation During Power Surges
- Motor-Drive Design made Simple
- Adaptive Cell Converter Topology Enables Constant Efficiency in PFC Applications
- Micropower Isolated Flyback Converter with Input Voltage Range from 6V to 100V
- Derating of Schottky Diodes
- Heatsink Optimization
- High Performance ZVS Buck Regulator Removes Barriers To Increased Power Throughput
- Waste heat replaces batteries
- Stepper Motor Control IC
Poll
Power Supplies
NXP Semiconductors
International Rectifier
Power Supply
Battery
Batteries
Fairchild Semiconductor
Diodes
Microcontrollers
Texas Instruments
National Semiconductor
GaN
Power
UPS
Maxim Integrated Products
Power Management
Solar
Microcontroller
Intersil
Linear Technology
STMicroelectronics
Analog
Analog Devices
MOSFET
Energy Harvesting
Vishay Intertechnology
IMS Research
MOSFETs
Smart Grid
Photovoltaic
All material on this site Copyright © 2009 - 2010 European Business Press SA. All rights reserved.
This site contains articles under license from EETimes Group , a division of United Business Media LLC.
This site contains articles under license from EETimes Group , a division of United Business Media LLC.


