The new devices feature an on-resistance that is approximately half that of previous products and a significantly reduced package size that is about one third as large compared with earlier MOSFETs.
At the top of the range is the µPA2812T1L P-channel MOSFET with a typical on-resistance of 4.2 mΩ and provided in a compact 3.3 mm x 3.3 mm HVSON package. In many cases, the low on‑resistance also means a reduction in the number of components required. Further significant space saving is achieved with the considerably more compact package, which is about one third the size of the previously used conventional SOP-8 package.
Furthermore, the HVSON package is designed to allow heat from inside the package to be dispersed to the mounting board via the exposed lead frame. Thanks to this highly efficient heat dispersion, it is possible to design, for example, lithium-ion battery packs that are significantly more compact.
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