GaN market consolidating as it approach $1bn

January 10, 2017 // By Nick Flaherty
The global market for gallium nitride (GaN) semiconductor devices is largely consolidated, with the top four companies taking over 65% of the overall market in 2015 as it approaches $1bn, says Transparency Market Research (TMR) in a new report.

The dominant company among the four top vendors is Efficient Power Conversion with a 19.2% share. The other three topmost companies of the global market, which collectively enjoyed a considerably large share in the overall global market are NXP, GaN Systems and Cree.

TMR expects the global GaN semiconductor devices market to grow at 17.0% annually from 2016 to 2024, growing from $870.9m in 2015 to approach $1bn in 216  and reach $3,438.4m by 2024. This is dominated by the aerospace and defence sectors, accounting for a share of over 42% of the global market in 2015.

North America and Europe are the dominant regional markets for GaN semiconductor devices and are expected to retain dominance over the next few years as well. The rising focus of the Europe Space Agency (ESA) on the increased usage of GaN semiconductors across space projects and the use of GaN-based transistors in the military and defense sectors in North America will help the GaN semiconductor devices market gain traction.

In the past few years, GaN technology has witnessed rapid advancements and vast improvement in the ability of GaN semiconductors to work under operating environments featuring high frequency, power density, and temperature with improved linearity and efficiency. This has boosted the usage of GaN semiconductor devices across an increased set of applications.

However GaN semiconductors are relatively expensive as compared to silicon-based semiconductors owing to the high production costs of gallium nitride as compared to silicon carbide. The issue can be tackled by producing GaN in bulk, says TMR, but there is currently no widespread method that can be used for the purpose owing to the requisition of high operating pressure and temperature and limited scalability of the material.

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