Infineon power management devices improve energy efficiency in EPS, motor control, pump applications

September 05, 2011 // By Christoph Hammerschmidt
Infineon has introduced a family of single P-channel 40V automotive power MOSFETs produced using advanced trench technology. The new 40 V OptiMOS P2 products aim power management applications for next-generation cars and offer improved energy efficiency, reduced CO2 emissions and cost savings.

According to the vendor, the product family offers the lowest R DS(on) P-channel 40 V MOSFET in the automotive industry and provides currents from 50 A to 180 A in various standard packages, for more than 30 derivatives. 180 A is a benchmark in P-channel technology. Applied as High-Side switches in automotive bridge applications, the P-channel 40 V OptiMOS P2 products do not require additional charge pump devices, providing significant cost savings and improved EMI performance. In combination with PWM (pulse width modulation) control, the new devices offer a better thermal behavior and a better avalanche performance than N-channel MOSFETs. This makes them ideal for reverse battery protection and motor control applications in cars such as EPS (Electric Power Steering) motor controls, 3-phase and H-bridge motors i.e. windshield wipers, electric parking brake, HVAC fan controls, and electric pumps i.e. for water, oil and fuel.

Cost and efficiency advantages are creating a clear industry trend towards trench-type MOSFET concepts. Based on the second generation of Infineon's trench technology, the OptiMOS P2 devices provide low gate charge, low capacitance, low switching losses, high currents and excellent FoM specifications (Figure of Merit, R DS(on) x Q g) to deliver high efficiency in electrical motors while minimizing EMC emissions. For example, an industry-wide lowest R DS(on) of only 2.4 mΩ (at 10 V in D²PAK packages) is one third less compared to alternative MOSFETs on the market.

With the new P-channel 40 V devices Infineon expands its product portfolio for motor controls with bridge configurations, which are widely used in automotive systems. Bridge configurations require MOSFETs both for the high-side and low-side. Compared to N-channel MOSFETs the new P-channel devices do not need an additional charge pump to implement high-side switches that drive DC brush motors or brushless 3-phase DC motors. This leads to cost savings as P-channels can also be driven by a simple drive circuit. In case of a H-bridge motor, savings