Low reverse current Schottky Barrier Diodes for voltage boosting LED designs

March 10, 2017 // By Nick Flaherty
Toshiba Electronics Europe (TEE) has launched six low reverse-current Schottky Barrier Diodes (SBDs) with a peak reverse voltage of 40V for voltage boosting circuits in white LED backlights and for liquid crystal displays in mobile devices.

High-speed, low-loss SBDs are activated by majority carriers, making them suitable for high-speed switching due to their low forward voltage and short reverse recovery time. The reverse current of the CCS15F40 is 25 μA (max), which is an approximately 87 percent reduction compared to conventional products. The thermal runaway temperature is 35°C higher than in conventional devices, contributing to stable circuit operations. The CCS15F40 features fast switching due to a low total capacitance of 130 pF (typ) @V R=0V. A low reverse current helps to lower power consumption of the devices, making thermal runaways unlikely, even in high-temperature environments.

In addition to the industry standard SOD-323 package, Toshiba has introduced leadless surface mounting packages (CST2C, CST2B) and SOD-882 packages (CST2) for applications where light weight, compact size, and high efficiency are required.

The CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 are available now.

www.toshiba.semicon-storage.com.