Using Toshiba’s latest, seventh generation n-channel process technology, the new SSM3K333R MOSFET is optimized for standard voltage switching requirements. The technology exhibits maximum ON resistance (RDS(ON)) values of only 42 mΩ and 28 mΩ with switching voltages of VGS=4.5 V and 10 V, respectively.
As well as low resistance values that enable the low loss operation essential for battery-operated equipment the SSM3K333R is specified for a maximum drain-source voltage (VDSS) of 30 V. As a result the device is also compatible with many industrial power management applications.
Another improvement is the new SOT-23F package, which offers lower thermal resistance against comparable package sizes. The improvement leads to a maximum DC current rating of 6 A and a drain power dissipation capability of 1 W from a package that has dimensions of 2.9 mm x 2.4 mm.
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