The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4 mm make them well suited to thin profile portable consumer electronics, including tablet PCs and smart phones. Initially Diodes is offering both n-channel and p-channel devices with breakdown voltage ratings of 20 V, 30 V and 60 V for use in a variety of high reliability load switching, signal switching and boost conversion applications.
The 20 V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150 mΩ, more than 50% lower than competing solutions, helping to reduce conduction losses and power dissipation. Its p-channel companion, the 20 V rated DMP21D0UFB4 offers a similar class-leading performance. Electrostatic discharge ratings of these MOSFETs are also high, at 2 kV and 3 kV, respectively.
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